FR2183882B1 - - Google Patents
Info
- Publication number
- FR2183882B1 FR2183882B1 FR7316371A FR7316371A FR2183882B1 FR 2183882 B1 FR2183882 B1 FR 2183882B1 FR 7316371 A FR7316371 A FR 7316371A FR 7316371 A FR7316371 A FR 7316371A FR 2183882 B1 FR2183882 B1 FR 2183882B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7886—Hot carrier produced by avalanche breakdown of a PN junction, e.g. FAMOS
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US25110572A | 1972-05-08 | 1972-05-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2183882A1 FR2183882A1 (xx) | 1973-12-21 |
FR2183882B1 true FR2183882B1 (xx) | 1977-09-02 |
Family
ID=22950499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7316371A Expired FR2183882B1 (xx) | 1972-05-08 | 1973-05-07 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5122349B2 (xx) |
CA (1) | CA974658A (xx) |
FR (1) | FR2183882B1 (xx) |
GB (1) | GB1374231A (xx) |
NL (1) | NL7306345A (xx) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1392599A (en) * | 1971-07-28 | 1975-04-30 | Mullard Ltd | Semiconductor memory elements |
JPS5040991B2 (xx) * | 1971-09-09 | 1975-12-27 |
-
1973
- 1973-05-04 GB GB2135973A patent/GB1374231A/en not_active Expired
- 1973-05-07 CA CA170,581A patent/CA974658A/en not_active Expired
- 1973-05-07 FR FR7316371A patent/FR2183882B1/fr not_active Expired
- 1973-05-07 NL NL7306345A patent/NL7306345A/xx not_active Application Discontinuation
- 1973-05-08 JP JP48051512A patent/JPS5122349B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2183882A1 (xx) | 1973-12-21 |
JPS4956594A (xx) | 1974-06-01 |
DE2322490A1 (de) | 1973-11-22 |
GB1374231A (en) | 1974-11-20 |
NL7306345A (xx) | 1973-11-12 |
JPS5122349B2 (xx) | 1976-07-09 |
CA974658A (en) | 1975-09-16 |
DE2322490B2 (de) | 1975-06-19 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |