FR2176029A1 - - Google Patents

Info

Publication number
FR2176029A1
FR2176029A1 FR7309069A FR7309069A FR2176029A1 FR 2176029 A1 FR2176029 A1 FR 2176029A1 FR 7309069 A FR7309069 A FR 7309069A FR 7309069 A FR7309069 A FR 7309069A FR 2176029 A1 FR2176029 A1 FR 2176029A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7309069A
Other languages
French (fr)
Other versions
FR2176029B3 (ja
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2176029A1 publication Critical patent/FR2176029A1/fr
Application granted granted Critical
Publication of FR2176029B3 publication Critical patent/FR2176029B3/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/23—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using electrostatic storage on a common layer, e.g. Forrester-Haeff tubes or William tubes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/048—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using other optical storage elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/26—Image pick-up tubes having an input of visible light and electric output
    • H01J31/28—Image pick-up tubes having an input of visible light and electric output with electron ray scanning the image screen
    • H01J31/283—Image pick-up tubes having an input of visible light and electric output with electron ray scanning the image screen with a target comprising semiconductor junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/026—Deposition thru hole in mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FR7309069A 1972-03-15 1973-03-14 Expired FR2176029B3 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US23478672A 1972-03-15 1972-03-15

Publications (2)

Publication Number Publication Date
FR2176029A1 true FR2176029A1 (ja) 1973-10-26
FR2176029B3 FR2176029B3 (ja) 1976-03-12

Family

ID=22882822

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7309069A Expired FR2176029B3 (ja) 1972-03-15 1973-03-14

Country Status (3)

Country Link
US (1) US3763476A (ja)
JP (1) JPS494919A (ja)
FR (1) FR2176029B3 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3803085A (en) * 1972-12-29 1974-04-09 Gen Electric Method for making polyetherimides
GB1463298A (en) * 1972-12-29 1977-02-02 Gen Electric Method for making polyetherimide and products produced thereby
JPS535790B2 (ja) * 1973-08-03 1978-03-02
US4068218A (en) * 1976-10-04 1978-01-10 Micro-Bit Corporation Method and apparatus for deep depletion read-out of MOS electron beam addressable memories
US4079358A (en) * 1976-10-04 1978-03-14 Micro-Bit Corporation Buried junction MOS memory capacitor target for electron beam addressable memory and method of using same
US4099261A (en) * 1977-02-22 1978-07-04 General Electric Company Method for writing on archival memory target by ion damage
JPS5475791A (en) * 1977-11-29 1979-06-16 Tech Res & Dev Inst Of Japan Def Agency Hydraulic actuator unit
US4233671A (en) * 1979-01-05 1980-11-11 Stanford University Read only memory and integrated circuit and method of programming by laser means
EP0038865A1 (en) * 1980-04-25 1981-11-04 Alton Owen Christensen Electron beam storage apparatus
US4652926A (en) * 1984-04-23 1987-03-24 Massachusetts Institute Of Technology Solid state imaging technique

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3440476A (en) * 1967-06-12 1969-04-22 Bell Telephone Labor Inc Electron beam storage device employing hole multiplication and diffusion
US3576392A (en) * 1968-06-26 1971-04-27 Rca Corp Semiconductor vidicon target having electronically alterable light response characteristics
US3668473A (en) * 1969-06-24 1972-06-06 Tokyo Shibaura Electric Co Photosensitive semi-conductor device
US3701979A (en) * 1970-01-09 1972-10-31 Micro Bit Corp Slow write-fast read memory method and system
US3676715A (en) * 1970-06-26 1972-07-11 Bell Telephone Labor Inc Semiconductor apparatus for image sensing and dynamic storage

Also Published As

Publication number Publication date
FR2176029B3 (ja) 1976-03-12
US3763476A (en) 1973-10-02
JPS494919A (ja) 1974-01-17

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Legal Events

Date Code Title Description
ST Notification of lapse