FR2173729A1 - - Google Patents

Info

Publication number
FR2173729A1
FR2173729A1 FR7206867A FR7206867A FR2173729A1 FR 2173729 A1 FR2173729 A1 FR 2173729A1 FR 7206867 A FR7206867 A FR 7206867A FR 7206867 A FR7206867 A FR 7206867A FR 2173729 A1 FR2173729 A1 FR 2173729A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7206867A
Other languages
French (fr)
Other versions
FR2173729B1 (ko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7206867A priority Critical patent/FR2173729B1/fr
Publication of FR2173729A1 publication Critical patent/FR2173729A1/fr
Application granted granted Critical
Publication of FR2173729B1 publication Critical patent/FR2173729B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
FR7206867A 1972-02-29 1972-02-29 Expired FR2173729B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7206867A FR2173729B1 (ko) 1972-02-29 1972-02-29

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7206867A FR2173729B1 (ko) 1972-02-29 1972-02-29

Publications (2)

Publication Number Publication Date
FR2173729A1 true FR2173729A1 (ko) 1973-10-12
FR2173729B1 FR2173729B1 (ko) 1977-07-15

Family

ID=9094323

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7206867A Expired FR2173729B1 (ko) 1972-02-29 1972-02-29

Country Status (1)

Country Link
FR (1) FR2173729B1 (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0009442A1 (fr) * 1978-09-15 1980-04-02 Thomson-Csf Transistors bipolaires à tension élevée, circuits intégrés comportant de tels transistors, et procédé de fabrication de tels circuits
EP0232510A2 (en) * 1985-12-11 1987-08-19 SGS MICROELETTRONICA S.p.A. Semiconductor device having a plane junction with autopassivating termination
EP0604163A2 (en) * 1992-12-21 1994-06-29 STMicroelectronics, Inc. Transistor structure for improved base-collector junction characteristics

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
FOR FAST, DENSE MEMORIES' DOUG PELTZER ET BILL HERNDON, PAGES 53-55.) *
REVUE US 'ELECTRONICS', VOL. 44, N 5, 1ER MARS 1971, 'ISOLATION METHOD SHRINKS BIPOLAR CELLS *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0009442A1 (fr) * 1978-09-15 1980-04-02 Thomson-Csf Transistors bipolaires à tension élevée, circuits intégrés comportant de tels transistors, et procédé de fabrication de tels circuits
FR2436501A1 (fr) * 1978-09-15 1980-04-11 Thomson Csf Transistors bipolaires a tension elevee, circuits integres comportant de tels transistors, et procede de fabrication de tels circuits
EP0232510A2 (en) * 1985-12-11 1987-08-19 SGS MICROELETTRONICA S.p.A. Semiconductor device having a plane junction with autopassivating termination
EP0232510A3 (en) * 1985-12-11 1988-01-20 Sgs Microelettronica S.P.A. Semiconductor device having a plane junction with autopassivating termination
EP0604163A2 (en) * 1992-12-21 1994-06-29 STMicroelectronics, Inc. Transistor structure for improved base-collector junction characteristics
EP0604163A3 (en) * 1992-12-21 1994-12-28 Sgs Thomson Microelectronics Transistor structure having improved base-collector junction characteristics.

Also Published As

Publication number Publication date
FR2173729B1 (ko) 1977-07-15

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Legal Events

Date Code Title Description
ST Notification of lapse