FR2172769A1 - Semiconductor doping - in enclosed vessel with source of impurities and porous inner plug - Google Patents

Semiconductor doping - in enclosed vessel with source of impurities and porous inner plug

Info

Publication number
FR2172769A1
FR2172769A1 FR7205759A FR7205759A FR2172769A1 FR 2172769 A1 FR2172769 A1 FR 2172769A1 FR 7205759 A FR7205759 A FR 7205759A FR 7205759 A FR7205759 A FR 7205759A FR 2172769 A1 FR2172769 A1 FR 2172769A1
Authority
FR
France
Prior art keywords
source
impurities
inner plug
porous inner
plug
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7205759A
Other languages
English (en)
French (fr)
Other versions
FR2172769B1 (https=
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7205759A priority Critical patent/FR2172769A1/fr
Publication of FR2172769A1 publication Critical patent/FR2172769A1/fr
Application granted granted Critical
Publication of FR2172769B1 publication Critical patent/FR2172769B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7205759A 1972-02-21 1972-02-21 Semiconductor doping - in enclosed vessel with source of impurities and porous inner plug Granted FR2172769A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7205759A FR2172769A1 (en) 1972-02-21 1972-02-21 Semiconductor doping - in enclosed vessel with source of impurities and porous inner plug

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7205759A FR2172769A1 (en) 1972-02-21 1972-02-21 Semiconductor doping - in enclosed vessel with source of impurities and porous inner plug

Publications (2)

Publication Number Publication Date
FR2172769A1 true FR2172769A1 (en) 1973-10-05
FR2172769B1 FR2172769B1 (https=) 1975-03-21

Family

ID=9093837

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7205759A Granted FR2172769A1 (en) 1972-02-21 1972-02-21 Semiconductor doping - in enclosed vessel with source of impurities and porous inner plug

Country Status (1)

Country Link
FR (1) FR2172769A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2409791A1 (fr) * 1977-11-25 1979-06-22 Silicium Semiconducteur Ssc Appareils de dopage par diffusion de tranches semi-conductrices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2409791A1 (fr) * 1977-11-25 1979-06-22 Silicium Semiconducteur Ssc Appareils de dopage par diffusion de tranches semi-conductrices

Also Published As

Publication number Publication date
FR2172769B1 (https=) 1975-03-21

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Legal Events

Date Code Title Description
ST Notification of lapse