FR2163477A1 - - Google Patents

Info

Publication number
FR2163477A1
FR2163477A1 FR7243283A FR7243283A FR2163477A1 FR 2163477 A1 FR2163477 A1 FR 2163477A1 FR 7243283 A FR7243283 A FR 7243283A FR 7243283 A FR7243283 A FR 7243283A FR 2163477 A1 FR2163477 A1 FR 2163477A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7243283A
Other versions
FR2163477B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2163477A1 publication Critical patent/FR2163477A1/fr
Application granted granted Critical
Publication of FR2163477B1 publication Critical patent/FR2163477B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/003—Anneal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/036—Diffusion, nonselective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
FR7243283A 1971-12-17 1972-11-29 Expired FR2163477B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00209233A US3840886A (en) 1971-12-17 1971-12-17 Microampere space charge limited transistor

Publications (2)

Publication Number Publication Date
FR2163477A1 true FR2163477A1 (fr) 1973-07-27
FR2163477B1 FR2163477B1 (fr) 1975-05-30

Family

ID=22777910

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7243283A Expired FR2163477B1 (fr) 1971-12-17 1972-11-29

Country Status (12)

Country Link
US (1) US3840886A (fr)
JP (1) JPS5128989B2 (fr)
AU (1) AU459526B2 (fr)
BE (1) BE792639A (fr)
CA (1) CA978280A (fr)
CH (1) CH545539A (fr)
ES (1) ES409701A1 (fr)
FR (1) FR2163477B1 (fr)
GB (1) GB1337906A (fr)
IT (1) IT969981B (fr)
NL (1) NL7215421A (fr)
SE (1) SE374622B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2555814A1 (fr) * 1983-11-29 1985-05-31 Sony Corp Composant semi-conducteur fonctionnant comme un transistor bipolaire destine a un circuit imprime

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3894891A (en) * 1973-12-26 1975-07-15 Ibm Method for making a space charge limited transistor having recessed dielectric isolation
US3936856A (en) * 1974-05-28 1976-02-03 International Business Machines Corporation Space-charge-limited integrated circuit structure
US3958264A (en) * 1974-06-24 1976-05-18 International Business Machines Corporation Space-charge-limited phototransistor
US4937640A (en) * 1980-11-03 1990-06-26 International Business Machines Corporation Short channel MOSFET
JPS6174369A (ja) * 1984-09-20 1986-04-16 Sony Corp 半導体装置
DE60203104D1 (de) * 2002-06-26 2005-04-07 St Microelectronics Nv Radiofrequenz-Schalter, insbesondere für ein zellulares Mobiltelefon

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2555814A1 (fr) * 1983-11-29 1985-05-31 Sony Corp Composant semi-conducteur fonctionnant comme un transistor bipolaire destine a un circuit imprime

Also Published As

Publication number Publication date
DE2259256B2 (de) 1976-08-26
NL7215421A (fr) 1973-06-19
US3840886A (en) 1974-10-08
DE2259256A1 (de) 1973-06-28
JPS5128989B2 (fr) 1976-08-23
AU4870672A (en) 1974-05-09
CH545539A (fr) 1974-01-31
CA978280A (en) 1975-11-18
FR2163477B1 (fr) 1975-05-30
GB1337906A (en) 1973-11-21
IT969981B (it) 1974-04-10
AU459526B2 (en) 1975-03-27
ES409701A1 (es) 1976-01-01
JPS4868179A (fr) 1973-09-17
SE374622B (fr) 1975-03-10
BE792639A (fr) 1973-03-30

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Legal Events

Date Code Title Description
ST Notification of lapse