FR2147883A1 - - Google Patents

Info

Publication number
FR2147883A1
FR2147883A1 FR7128793A FR7128793A FR2147883A1 FR 2147883 A1 FR2147883 A1 FR 2147883A1 FR 7128793 A FR7128793 A FR 7128793A FR 7128793 A FR7128793 A FR 7128793A FR 2147883 A1 FR2147883 A1 FR 2147883A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7128793A
Other languages
French (fr)
Other versions
FR2147883B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LECROSNIER DANIEL
Original Assignee
LECROSNIER DANIEL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LECROSNIER DANIEL filed Critical LECROSNIER DANIEL
Priority to FR7128793A priority Critical patent/FR2147883B1/fr
Priority to GB3636872A priority patent/GB1334660A/en
Priority to DE2238278A priority patent/DE2238278C3/de
Priority to US00277878A priority patent/US3767982A/en
Priority to JP7872972A priority patent/JPS5415666B2/ja
Publication of FR2147883A1 publication Critical patent/FR2147883A1/fr
Application granted granted Critical
Publication of FR2147883B1 publication Critical patent/FR2147883B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/80FETs having rectifying junction gate electrodes
    • H10D30/83FETs having PN junction gate electrodes
    • H10D30/831Vertical FETs having PN junction gate electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR7128793A 1971-08-05 1971-08-05 Expired FR2147883B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7128793A FR2147883B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1971-08-05 1971-08-05
GB3636872A GB1334660A (en) 1971-08-05 1972-08-03 Field-effect semiconductor devices
DE2238278A DE2238278C3 (de) 1971-08-05 1972-08-03 Sperrschicht-Feldeffekttransistor
US00277878A US3767982A (en) 1971-08-05 1972-08-04 Ion implantation field-effect semiconductor devices
JP7872972A JPS5415666B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1971-08-05 1972-08-05

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7128793A FR2147883B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1971-08-05 1971-08-05

Publications (2)

Publication Number Publication Date
FR2147883A1 true FR2147883A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1973-03-11
FR2147883B1 FR2147883B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1977-01-28

Family

ID=9081533

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7128793A Expired FR2147883B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1971-08-05 1971-08-05

Country Status (5)

Country Link
US (1) US3767982A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5415666B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2238278C3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2147883B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1334660A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0874394A3 (en) * 1997-04-23 2000-09-13 Motorola, Inc. GaAs vertical fet

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3977017A (en) * 1973-04-25 1976-08-24 Sony Corporation Multi-channel junction gated field effect transistor and method of making same
JPS49134282A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-04-25 1974-12-24
US3982264A (en) * 1973-04-25 1976-09-21 Sony Corporation Junction gated field effect transistor
JPS579505B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-12-28 1982-02-22
US4106044A (en) * 1974-03-16 1978-08-08 Nippon Gakki Seizo Kabushiki Kaisha Field effect transistor having unsaturated characteristics
JPS50135989A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-04-06 1975-10-28
JPS50146449U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-05-21 1975-12-04
US3953879A (en) * 1974-07-12 1976-04-27 Massachusetts Institute Of Technology Current-limiting field effect device
JPS5158077A (en) * 1974-11-18 1976-05-21 Matsushita Electric Ind Co Ltd mos gatahandotaisochino seizohoho
JPS5220769A (en) * 1975-08-09 1977-02-16 Nippon Gakki Seizo Kk Longitudinal semi-conductor unit
GB2075401B (en) * 1980-04-02 1983-07-27 Fawzy El Menshawy Mohamed Improvements in methods and apparatus for electrical discharge machining
US4959697A (en) * 1988-07-20 1990-09-25 Vtc Incorporated Short channel junction field effect transistor
US5098862A (en) * 1990-11-07 1992-03-24 Gte Laboratories Incorporated Method of making ohmic electrical contact to a matrix of semiconductor material
EP0619921A1 (de) * 1991-12-23 1994-10-19 Forschungszentrum Jülich Gmbh Elektronisches bauelement und verfahren zu dessen herstellung
TWI327754B (en) * 2006-01-04 2010-07-21 Promos Technologies Inc Method for preparing gate oxide layer

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3381187A (en) * 1964-08-18 1968-04-30 Hughes Aircraft Co High-frequency field-effect triode device
FR1497548A (fr) * 1966-07-22 1967-10-13 Jeumont Schneider Dispositif semi-conducteur bistable pour courants forts
US3431150A (en) * 1966-10-07 1969-03-04 Us Air Force Process for implanting grids in semiconductor devices
US3497777A (en) * 1967-06-13 1970-02-24 Stanislas Teszner Multichannel field-effect semi-conductor device
US3558366A (en) * 1968-09-17 1971-01-26 Bell Telephone Labor Inc Metal shielding for ion implanted semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0874394A3 (en) * 1997-04-23 2000-09-13 Motorola, Inc. GaAs vertical fet

Also Published As

Publication number Publication date
DE2238278C3 (de) 1975-04-10
FR2147883B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1977-01-28
DE2238278A1 (de) 1973-02-15
GB1334660A (en) 1973-10-24
US3767982A (en) 1973-10-23
JPS5415666B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1979-06-16
JPS4826375A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1973-04-06
DE2238278B2 (de) 1974-08-15

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Legal Events

Date Code Title Description
ST Notification of lapse