FR2144581B1 - - Google Patents

Info

Publication number
FR2144581B1
FR2144581B1 FR7124728A FR7124728A FR2144581B1 FR 2144581 B1 FR2144581 B1 FR 2144581B1 FR 7124728 A FR7124728 A FR 7124728A FR 7124728 A FR7124728 A FR 7124728A FR 2144581 B1 FR2144581 B1 FR 2144581B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7124728A
Other languages
French (fr)
Other versions
FR2144581A1 (de
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silec Semi Conducteurs SA
Original Assignee
Silec Semi Conducteurs SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silec Semi Conducteurs SA filed Critical Silec Semi Conducteurs SA
Priority to FR7124728A priority Critical patent/FR2144581B1/fr
Publication of FR2144581A1 publication Critical patent/FR2144581A1/fr
Application granted granted Critical
Publication of FR2144581B1 publication Critical patent/FR2144581B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
FR7124728A 1971-07-06 1971-07-06 Expired FR2144581B1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7124728A FR2144581B1 (de) 1971-07-06 1971-07-06

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7124728A FR2144581B1 (de) 1971-07-06 1971-07-06

Publications (2)

Publication Number Publication Date
FR2144581A1 FR2144581A1 (de) 1973-02-16
FR2144581B1 true FR2144581B1 (de) 1976-03-19

Family

ID=9079917

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7124728A Expired FR2144581B1 (de) 1971-07-06 1971-07-06

Country Status (1)

Country Link
FR (1) FR2144581B1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ZA775629B (en) * 1976-10-29 1978-08-30 Westinghouse Electric Corp An improvement in or relating to thyristor fired by collapsing voltage
GB8717695D0 (en) * 1987-07-25 1987-09-03 Marconi Electronic Devices Thyristors
EP0577623B1 (de) * 1991-03-27 1998-05-27 Siemens Aktiengesellschaft Verfahren zur Herstellung eines Thyristors mit einstellbarer Kippspannung

Also Published As

Publication number Publication date
FR2144581A1 (de) 1973-02-16

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Legal Events

Date Code Title Description
ST Notification of lapse