FR2139667A1 - Diffused base transistor - with a source of recombination centres - Google Patents

Diffused base transistor - with a source of recombination centres

Info

Publication number
FR2139667A1
FR2139667A1 FR7119574A FR7119574A FR2139667A1 FR 2139667 A1 FR2139667 A1 FR 2139667A1 FR 7119574 A FR7119574 A FR 7119574A FR 7119574 A FR7119574 A FR 7119574A FR 2139667 A1 FR2139667 A1 FR 2139667A1
Authority
FR
France
Prior art keywords
diffused
layer
source
transistor
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7119574A
Other languages
English (en)
French (fr)
Other versions
FR2139667B1 (online.php
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7119574A priority Critical patent/FR2139667A1/fr
Publication of FR2139667A1 publication Critical patent/FR2139667A1/fr
Application granted granted Critical
Publication of FR2139667B1 publication Critical patent/FR2139667B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment

Landscapes

  • Bipolar Transistors (AREA)
FR7119574A 1971-05-28 1971-05-28 Diffused base transistor - with a source of recombination centres Granted FR2139667A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7119574A FR2139667A1 (en) 1971-05-28 1971-05-28 Diffused base transistor - with a source of recombination centres

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7119574A FR2139667A1 (en) 1971-05-28 1971-05-28 Diffused base transistor - with a source of recombination centres

Publications (2)

Publication Number Publication Date
FR2139667A1 true FR2139667A1 (en) 1973-01-12
FR2139667B1 FR2139667B1 (online.php) 1977-11-18

Family

ID=9077830

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7119574A Granted FR2139667A1 (en) 1971-05-28 1971-05-28 Diffused base transistor - with a source of recombination centres

Country Status (1)

Country Link
FR (1) FR2139667A1 (online.php)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2318500A1 (fr) * 1975-07-18 1977-02-11 Tokyo Shibaura Electric Co Circuit a transistors a effet de champ a metal-oxyde-semi-conducteur complementaire et son procede de fabrication

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2318500A1 (fr) * 1975-07-18 1977-02-11 Tokyo Shibaura Electric Co Circuit a transistors a effet de champ a metal-oxyde-semi-conducteur complementaire et son procede de fabrication

Also Published As

Publication number Publication date
FR2139667B1 (online.php) 1977-11-18

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Legal Events

Date Code Title Description
ST Notification of lapse