FR2137666A1 - - Google Patents
Info
- Publication number
- FR2137666A1 FR2137666A1 FR7216508A FR7216508A FR2137666A1 FR 2137666 A1 FR2137666 A1 FR 2137666A1 FR 7216508 A FR7216508 A FR 7216508A FR 7216508 A FR7216508 A FR 7216508A FR 2137666 A1 FR2137666 A1 FR 2137666A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41716—Cathode or anode electrodes for thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19712123322 DE2123322C3 (de) | 1971-05-11 | Thyristor mit Kurzschlußemitter |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2137666A1 true FR2137666A1 (xx) | 1972-12-29 |
Family
ID=5807534
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7216508A Withdrawn FR2137666A1 (xx) | 1971-05-11 | 1972-05-09 |
Country Status (5)
Country | Link |
---|---|
CH (1) | CH537098A (xx) |
FR (1) | FR2137666A1 (xx) |
GB (1) | GB1387025A (xx) |
IT (1) | IT959704B (xx) |
NL (1) | NL7206121A (xx) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0298001A1 (fr) * | 1987-07-03 | 1989-01-04 | STMicroelectronics S.A. | Thyristor ou triac à bandes de court-circuit allongées |
-
1972
- 1972-03-22 CH CH423572A patent/CH537098A/de not_active IP Right Cessation
- 1972-04-18 GB GB1790872A patent/GB1387025A/en not_active Expired
- 1972-05-05 NL NL7206121A patent/NL7206121A/xx unknown
- 1972-05-05 IT IT2394172A patent/IT959704B/it active
- 1972-05-09 FR FR7216508A patent/FR2137666A1/fr not_active Withdrawn
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0298001A1 (fr) * | 1987-07-03 | 1989-01-04 | STMicroelectronics S.A. | Thyristor ou triac à bandes de court-circuit allongées |
FR2617640A1 (fr) * | 1987-07-03 | 1989-01-06 | Thomson Semiconducteurs | Thyristor ou triac a bandes de court-circuit allongees |
US4903105A (en) * | 1987-07-03 | 1990-02-20 | Sgs-Thomson Microelectronics S.A. | Thyristor or triac with emitter shorting stripes |
Also Published As
Publication number | Publication date |
---|---|
IT959704B (it) | 1973-11-10 |
NL7206121A (xx) | 1972-11-14 |
CH537098A (de) | 1973-05-15 |
DE2123322B2 (de) | 1977-06-30 |
GB1387025A (en) | 1975-03-12 |
DE2123322A1 (de) | 1972-11-23 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |