FR2131994B1 - - Google Patents

Info

Publication number
FR2131994B1
FR2131994B1 FR7207621A FR7207621A FR2131994B1 FR 2131994 B1 FR2131994 B1 FR 2131994B1 FR 7207621 A FR7207621 A FR 7207621A FR 7207621 A FR7207621 A FR 7207621A FR 2131994 B1 FR2131994 B1 FR 2131994B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7207621A
Other languages
French (fr)
Other versions
FR2131994A1 (OSRAM
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2131994A1 publication Critical patent/FR2131994A1/fr
Application granted granted Critical
Publication of FR2131994B1 publication Critical patent/FR2131994B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR7207621A 1971-03-30 1972-02-29 Expired FR2131994B1 (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12949771A 1971-03-30 1971-03-30

Publications (2)

Publication Number Publication Date
FR2131994A1 FR2131994A1 (OSRAM) 1972-11-17
FR2131994B1 true FR2131994B1 (OSRAM) 1977-06-17

Family

ID=22440256

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7207621A Expired FR2131994B1 (OSRAM) 1971-03-30 1972-02-29

Country Status (5)

Country Link
US (1) US3704384A (OSRAM)
JP (1) JPS5615811Y2 (OSRAM)
DE (1) DE2212196A1 (OSRAM)
FR (1) FR2131994B1 (OSRAM)
GB (1) GB1360578A (OSRAM)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4163242A (en) * 1972-11-13 1979-07-31 Siemens Aktiengesellschaft MOS storage integrated circuit using individual FET elements
US3911466A (en) * 1973-10-29 1975-10-07 Motorola Inc Digitally controllable enhanced capacitor
US3983414A (en) * 1975-02-10 1976-09-28 Fairchild Camera And Instrument Corporation Charge cancelling structure and method for integrated circuits
JPS5812457Y2 (ja) * 1975-12-31 1983-03-09 富士通株式会社 ハンドウタイキオクソウチ
JPS5856266B2 (ja) * 1977-02-03 1983-12-14 テキサス インスツルメンツ インコ−ポレイテツド Mosメモリ
DE2740154A1 (de) * 1977-09-06 1979-03-15 Siemens Ag Monolithisch integrierte halbleiteranordnung
JP3369296B2 (ja) * 1994-03-25 2003-01-20 三菱電機株式会社 Mos型コンデンサ
US6153463A (en) * 1999-07-09 2000-11-28 Macronix International Co., Ltd. Triple plate capacitor and method for manufacturing

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6808352A (OSRAM) * 1968-06-14 1969-12-16
US3560815A (en) * 1968-10-10 1971-02-02 Gen Electric Voltage-variable capacitor with extendible pn junction region

Also Published As

Publication number Publication date
JPS55169868U (OSRAM) 1980-12-05
GB1360578A (en) 1974-07-17
US3704384A (en) 1972-11-28
FR2131994A1 (OSRAM) 1972-11-17
JPS5615811Y2 (OSRAM) 1981-04-14
DE2212196A1 (de) 1972-10-05

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Legal Events

Date Code Title Description
ST Notification of lapse