FR2129992A1 - - Google Patents

Info

Publication number
FR2129992A1
FR2129992A1 FR7110570A FR7110570A FR2129992A1 FR 2129992 A1 FR2129992 A1 FR 2129992A1 FR 7110570 A FR7110570 A FR 7110570A FR 7110570 A FR7110570 A FR 7110570A FR 2129992 A1 FR2129992 A1 FR 2129992A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7110570A
Other languages
French (fr)
Other versions
FR2129992B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LECROSNIER DANIEL
Original Assignee
LECROSNIER DANIEL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LECROSNIER DANIEL filed Critical LECROSNIER DANIEL
Priority to FR717110570A priority Critical patent/FR2129992B1/fr
Publication of FR2129992A1 publication Critical patent/FR2129992A1/fr
Application granted granted Critical
Publication of FR2129992B1 publication Critical patent/FR2129992B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/80FETs having rectifying junction gate electrodes
    • H10D30/83FETs having PN junction gate electrodes
    • H10D30/831Vertical FETs having PN junction gate electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
FR717110570A 1971-03-25 1971-03-25 Expired FR2129992B1 (enrdf_load_stackoverflow)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR717110570A FR2129992B1 (enrdf_load_stackoverflow) 1971-03-25 1971-03-25

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR717110570A FR2129992B1 (enrdf_load_stackoverflow) 1971-03-25 1971-03-25

Publications (2)

Publication Number Publication Date
FR2129992A1 true FR2129992A1 (enrdf_load_stackoverflow) 1972-11-03
FR2129992B1 FR2129992B1 (enrdf_load_stackoverflow) 1974-06-21

Family

ID=9074121

Family Applications (1)

Application Number Title Priority Date Filing Date
FR717110570A Expired FR2129992B1 (enrdf_load_stackoverflow) 1971-03-25 1971-03-25

Country Status (1)

Country Link
FR (1) FR2129992B1 (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0789402A1 (en) * 1995-12-29 1997-08-13 Texas Instruments Incorporated Gate contact structure of a vertical high frequency semiconductor device
EP1079438A3 (en) * 1995-12-29 2001-09-19 Texas Instruments Incorporated High frequency semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1536107A (fr) * 1966-09-09 1968-08-09 Ass Elect Ind Perfectionnements aux dispositifs à semiconducteur
FR2024916A1 (enrdf_load_stackoverflow) * 1968-11-22 1970-09-04 Western Electric Co
FR2027452A1 (enrdf_load_stackoverflow) * 1968-12-31 1970-09-25 Philips Nv

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1536107A (fr) * 1966-09-09 1968-08-09 Ass Elect Ind Perfectionnements aux dispositifs à semiconducteur
FR2024916A1 (enrdf_load_stackoverflow) * 1968-11-22 1970-09-04 Western Electric Co
FR2027452A1 (enrdf_load_stackoverflow) * 1968-12-31 1970-09-25 Philips Nv

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
"IMPLANTED COMPONENTS IN MICRO-CIRCUITS"J.D.MAC DOUGALL ET AL PAGES 140-145.) *
(REVUE AMERICAINE"PROCEEDINGS OF THE NATIONAL ELECTRONIC CONFERENCE"VOLUME 25,8-10 DECEMBRE 1969"IMPLANTED COMPONENTS IN MICRO-CIRCUITS"J.D.MAC DOUGALL ET AL PAGES 140-145.) *
REVUE AMERICAINE"PROCEEDINGS OF THE NATIONAL ELECTRONIC CONFERENCE"VOLUME 25,8-10 DECEMBRE 1969 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0789402A1 (en) * 1995-12-29 1997-08-13 Texas Instruments Incorporated Gate contact structure of a vertical high frequency semiconductor device
US5910665A (en) * 1995-12-29 1999-06-08 Texas Instruments Incorporated Low capacitance power VFET method and device
EP1079438A3 (en) * 1995-12-29 2001-09-19 Texas Instruments Incorporated High frequency semiconductor device

Also Published As

Publication number Publication date
FR2129992B1 (enrdf_load_stackoverflow) 1974-06-21

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