FR2129827A1 - - Google Patents
Info
- Publication number
- FR2129827A1 FR2129827A1 FR7108992A FR7108992A FR2129827A1 FR 2129827 A1 FR2129827 A1 FR 2129827A1 FR 7108992 A FR7108992 A FR 7108992A FR 7108992 A FR7108992 A FR 7108992A FR 2129827 A1 FR2129827 A1 FR 2129827A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7108992A FR2129827B1 (nl) | 1971-03-15 | 1971-03-15 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7108992A FR2129827B1 (nl) | 1971-03-15 | 1971-03-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2129827A1 true FR2129827A1 (nl) | 1972-11-03 |
FR2129827B1 FR2129827B1 (nl) | 1976-09-03 |
Family
ID=9073549
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7108992A Expired FR2129827B1 (nl) | 1971-03-15 | 1971-03-15 |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2129827B1 (nl) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2314583A1 (fr) * | 1975-06-11 | 1977-01-07 | Rca Corp | Dispositif a circuit integre comprenant a la fois des transistors a effet de champ a porte isolee, a canal du type n et a canal du type p. |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1448383A (fr) * | 1964-09-24 | 1966-08-05 | Ibm | Procédé de fabrication d'éléments semi-conducteurs |
-
1971
- 1971-03-15 FR FR7108992A patent/FR2129827B1/fr not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1448383A (fr) * | 1964-09-24 | 1966-08-05 | Ibm | Procédé de fabrication d'éléments semi-conducteurs |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2314583A1 (fr) * | 1975-06-11 | 1977-01-07 | Rca Corp | Dispositif a circuit integre comprenant a la fois des transistors a effet de champ a porte isolee, a canal du type n et a canal du type p. |
Also Published As
Publication number | Publication date |
---|---|
FR2129827B1 (nl) | 1976-09-03 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |