FR2129827A1 - - Google Patents
Info
- Publication number
- FR2129827A1 FR2129827A1 FR7108992A FR7108992A FR2129827A1 FR 2129827 A1 FR2129827 A1 FR 2129827A1 FR 7108992 A FR7108992 A FR 7108992A FR 7108992 A FR7108992 A FR 7108992A FR 2129827 A1 FR2129827 A1 FR 2129827A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7108992A FR2129827B1 (enrdf_load_stackoverflow) | 1971-03-15 | 1971-03-15 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7108992A FR2129827B1 (enrdf_load_stackoverflow) | 1971-03-15 | 1971-03-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2129827A1 true FR2129827A1 (enrdf_load_stackoverflow) | 1972-11-03 |
FR2129827B1 FR2129827B1 (enrdf_load_stackoverflow) | 1976-09-03 |
Family
ID=9073549
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7108992A Expired FR2129827B1 (enrdf_load_stackoverflow) | 1971-03-15 | 1971-03-15 |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2129827B1 (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2314583A1 (fr) * | 1975-06-11 | 1977-01-07 | Rca Corp | Dispositif a circuit integre comprenant a la fois des transistors a effet de champ a porte isolee, a canal du type n et a canal du type p. |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1448383A (fr) * | 1964-09-24 | 1966-08-05 | Ibm | Procédé de fabrication d'éléments semi-conducteurs |
-
1971
- 1971-03-15 FR FR7108992A patent/FR2129827B1/fr not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1448383A (fr) * | 1964-09-24 | 1966-08-05 | Ibm | Procédé de fabrication d'éléments semi-conducteurs |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2314583A1 (fr) * | 1975-06-11 | 1977-01-07 | Rca Corp | Dispositif a circuit integre comprenant a la fois des transistors a effet de champ a porte isolee, a canal du type n et a canal du type p. |
Also Published As
Publication number | Publication date |
---|---|
FR2129827B1 (enrdf_load_stackoverflow) | 1976-09-03 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |