FR2128164A1 - - Google Patents

Info

Publication number
FR2128164A1
FR2128164A1 FR7108025A FR7108025A FR2128164A1 FR 2128164 A1 FR2128164 A1 FR 2128164A1 FR 7108025 A FR7108025 A FR 7108025A FR 7108025 A FR7108025 A FR 7108025A FR 2128164 A1 FR2128164 A1 FR 2128164A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7108025A
Other languages
French (fr)
Other versions
FR2128164B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR7108025A priority Critical patent/FR2128164B1/fr
Priority to IT6772972A priority patent/IT952930B/en
Priority to GB1114772A priority patent/GB1380143A/en
Priority to BE780423A priority patent/BE780423A/en
Publication of FR2128164A1 publication Critical patent/FR2128164A1/fr
Application granted granted Critical
Publication of FR2128164B1 publication Critical patent/FR2128164B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
FR7108025A 1971-03-09 1971-03-09 Expired FR2128164B1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR7108025A FR2128164B1 (en) 1971-03-09 1971-03-09
IT6772972A IT952930B (en) 1971-03-09 1972-03-08 PROCEDURE FOR THE MANUFACTURE OF SILICON INTEGRATED CIRCUITS
GB1114772A GB1380143A (en) 1971-03-09 1972-03-09
BE780423A BE780423A (en) 1971-03-09 1972-03-09 PROCESS FOR THE MANUFACTURING OF SILICON INTEGRATED CIRCUITS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7108025A FR2128164B1 (en) 1971-03-09 1971-03-09

Publications (2)

Publication Number Publication Date
FR2128164A1 true FR2128164A1 (en) 1972-10-20
FR2128164B1 FR2128164B1 (en) 1973-11-30

Family

ID=9073164

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7108025A Expired FR2128164B1 (en) 1971-03-09 1971-03-09

Country Status (4)

Country Link
BE (1) BE780423A (en)
FR (1) FR2128164B1 (en)
GB (1) GB1380143A (en)
IT (1) IT952930B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0601093A1 (en) * 1991-08-28 1994-06-15 Advanced Power Technology Inc. Igbt process and device with platinum lifetime control
EP0675527A1 (en) * 1994-03-30 1995-10-04 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Manufacturing process for obtaining bipolar transistors with controlled storage time

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2030293A1 (en) * 1969-02-04 1970-11-13 Western Electric Co

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2030293A1 (en) * 1969-02-04 1970-11-13 Western Electric Co

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
(REVUE AMERICAINE"IBM TECHNICAL DISCLOSURE BULLETIN"VOL.10,OCTOBRE 1967"SELECTIVE AREA GOLD DOPING IN INTEGRATED CIRCUITS" F.BARSON PAGE 659.) *
(REVUE AMERICAINE"IBM TECHNICAL DISCLOSURE BULLETIN"VOL.10,OCTOBRE 1967,"SELECTIVE AREA GOLD DOPING IN INTEGRATED CIRCUITS" F.BARSON PAGE 659. *
DOPING IN INTEGRATED CIRCUITS" F.BARSON PAGE 659.) *
REVUE AMERICAINE"IBM TECHNICAL DISCLOSURE BULLETIN"VOL.10,OCTOBRE 1967"SELECTIVE AREA GOLD *
REVUE INTERNATIONALE "SOLID-STATE ELECTRONICS" VOL.13, JUILLET 1970,"THE INFLUENCE OF PLATINUMIN THE SI-SIO2 SYSTEM" S.D.BROTHER SON PAGES 1113-1115.) *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0601093A1 (en) * 1991-08-28 1994-06-15 Advanced Power Technology Inc. Igbt process and device with platinum lifetime control
EP0601093A4 (en) * 1991-08-28 1995-04-12 Advanced Power Technology Igbt process and device with platinum lifetime control.
EP0675527A1 (en) * 1994-03-30 1995-10-04 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Manufacturing process for obtaining bipolar transistors with controlled storage time
US5624852A (en) * 1994-03-30 1997-04-29 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Manufacturing process for obtaining integrated structure bipolar transistors with controlled storage time
US5629555A (en) * 1994-03-30 1997-05-13 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Integrated structure bipolar transistors with controlled storage time

Also Published As

Publication number Publication date
IT952930B (en) 1973-07-30
FR2128164B1 (en) 1973-11-30
BE780423A (en) 1972-07-03
GB1380143A (en) 1975-01-08

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Legal Events

Date Code Title Description
ST Notification of lapse