FR2121935A5 - - Google Patents
Info
- Publication number
- FR2121935A5 FR2121935A5 FR7100772A FR7100772A FR2121935A5 FR 2121935 A5 FR2121935 A5 FR 2121935A5 FR 7100772 A FR7100772 A FR 7100772A FR 7100772 A FR7100772 A FR 7100772A FR 2121935 A5 FR2121935 A5 FR 2121935A5
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7100772A FR2121935A5 (enExample) | 1971-01-12 | 1971-01-12 | |
| US00214002A US3715637A (en) | 1971-01-12 | 1971-12-30 | Logic circuits employing complementary field-effect transistors in which the gate is insulated from the substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7100772A FR2121935A5 (enExample) | 1971-01-12 | 1971-01-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR2121935A5 true FR2121935A5 (enExample) | 1972-08-25 |
Family
ID=9070119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7100772A Expired FR2121935A5 (enExample) | 1971-01-12 | 1971-01-12 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US3715637A (enExample) |
| FR (1) | FR2121935A5 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4178605A (en) * | 1978-01-30 | 1979-12-11 | Rca Corp. | Complementary MOS inverter structure |
| US4472821A (en) * | 1982-05-03 | 1984-09-18 | General Electric Company | Dynamic shift register utilizing CMOS dual gate transistors |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3409839A (en) * | 1965-08-04 | 1968-11-05 | North American Rockwell | Method and apparatus for minimizing the effects of ionizing radiation on semiconductor circuits |
-
1971
- 1971-01-12 FR FR7100772A patent/FR2121935A5/fr not_active Expired
- 1971-12-30 US US00214002A patent/US3715637A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US3715637A (en) | 1973-02-06 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TP | Transmission of property | ||
| ST | Notification of lapse |