FR2120166A1 - - Google Patents

Info

Publication number
FR2120166A1
FR2120166A1 FR7147681A FR7147681A FR2120166A1 FR 2120166 A1 FR2120166 A1 FR 2120166A1 FR 7147681 A FR7147681 A FR 7147681A FR 7147681 A FR7147681 A FR 7147681A FR 2120166 A1 FR2120166 A1 FR 2120166A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7147681A
Other languages
French (fr)
Other versions
FR2120166B1 (OSRAM
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2120166A1 publication Critical patent/FR2120166A1/fr
Application granted granted Critical
Publication of FR2120166B1 publication Critical patent/FR2120166B1/fr
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
FR7147681A 1970-12-31 1971-12-30 Expired FR2120166B1 (OSRAM)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10316770A 1970-12-31 1970-12-31
US10316670A 1970-12-31 1970-12-31
US10316970A 1970-12-31 1970-12-31

Publications (2)

Publication Number Publication Date
FR2120166A1 true FR2120166A1 (OSRAM) 1972-08-11
FR2120166B1 FR2120166B1 (OSRAM) 1975-08-22

Family

ID=27379484

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7147681A Expired FR2120166B1 (OSRAM) 1970-12-31 1971-12-30

Country Status (6)

Country Link
BE (1) BE777474A (OSRAM)
DE (1) DE2165734A1 (OSRAM)
FR (1) FR2120166B1 (OSRAM)
GB (1) GB1358190A (OSRAM)
IT (1) IT945842B (OSRAM)
NL (1) NL7117969A (OSRAM)

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
REVUE AMERICAINE "IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE DIGEST OF TECHNICAL PAPERS", 17 FEVRIER 1971, PAGES 10-11, ARTICLE: "TWO-TERMINAL TRANSISTOR MEMORY CELL USING BREAKDOWN" J. MAR .) *

Also Published As

Publication number Publication date
BE777474A (fr) 1972-04-17
IT945842B (it) 1973-05-10
NL7117969A (OSRAM) 1972-07-04
FR2120166B1 (OSRAM) 1975-08-22
DE2165734A1 (de) 1972-08-03
GB1358190A (en) 1974-06-26

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Legal Events

Date Code Title Description
ST Notification of lapse