FR2117976A1 - - Google Patents

Info

Publication number
FR2117976A1
FR2117976A1 FR7144221A FR7144221A FR2117976A1 FR 2117976 A1 FR2117976 A1 FR 2117976A1 FR 7144221 A FR7144221 A FR 7144221A FR 7144221 A FR7144221 A FR 7144221A FR 2117976 A1 FR2117976 A1 FR 2117976A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7144221A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2117976A1 publication Critical patent/FR2117976A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H01L29/66295—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
FR7144221A 1970-12-09 1971-12-09 Withdrawn FR2117976A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5847770 1970-12-09

Publications (1)

Publication Number Publication Date
FR2117976A1 true FR2117976A1 (en) 1972-07-28

Family

ID=10481716

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7144221A Withdrawn FR2117976A1 (en) 1970-12-09 1971-12-09

Country Status (4)

Country Link
AU (1) AU3637971A (en)
DE (1) DE2160426A1 (en)
FR (1) FR2117976A1 (en)
NL (1) NL7116688A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2206585A1 (en) * 1972-11-13 1974-06-07 Radiotechnique Compelec
EP0244171A1 (en) * 1986-04-28 1987-11-04 BRITISH TELECOMMUNICATIONS public limited company Bipolar transistor having an implanted extrinsic base region

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1981001911A1 (en) * 1979-12-28 1981-07-09 Ibm Method for achieving ideal impurity base profile in a transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2206585A1 (en) * 1972-11-13 1974-06-07 Radiotechnique Compelec
EP0244171A1 (en) * 1986-04-28 1987-11-04 BRITISH TELECOMMUNICATIONS public limited company Bipolar transistor having an implanted extrinsic base region

Also Published As

Publication number Publication date
AU3637971A (en) 1973-06-07
DE2160426A1 (en) 1972-06-29
NL7116688A (en) 1972-06-13

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Legal Events

Date Code Title Description
ST Notification of lapse