FR2113906A1 - - Google Patents

Info

Publication number
FR2113906A1
FR2113906A1 FR7140345A FR7140345A FR2113906A1 FR 2113906 A1 FR2113906 A1 FR 2113906A1 FR 7140345 A FR7140345 A FR 7140345A FR 7140345 A FR7140345 A FR 7140345A FR 2113906 A1 FR2113906 A1 FR 2113906A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7140345A
Other languages
French (fr)
Other versions
FR2113906B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of FR2113906A1 publication Critical patent/FR2113906A1/fr
Application granted granted Critical
Publication of FR2113906B1 publication Critical patent/FR2113906B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63Combinations of vertical and lateral BJTs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
FR7140345A 1970-11-12 1971-11-10 Expired FR2113906B1 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702055661 DE2055661A1 (de) 1970-11-12 1970-11-12 Monolithisch integrierte Festkörperschaltung

Publications (2)

Publication Number Publication Date
FR2113906A1 true FR2113906A1 (enrdf_load_stackoverflow) 1972-06-30
FR2113906B1 FR2113906B1 (enrdf_load_stackoverflow) 1978-06-02

Family

ID=5787899

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7140345A Expired FR2113906B1 (enrdf_load_stackoverflow) 1970-11-12 1971-11-10

Country Status (3)

Country Link
DE (1) DE2055661A1 (enrdf_load_stackoverflow)
FR (1) FR2113906B1 (enrdf_load_stackoverflow)
IT (1) IT941368B (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0008106A1 (de) * 1978-08-08 1980-02-20 Siemens Aktiengesellschaft Halbleitervorrichtung mit mehreren in einem Halbleiterkristall vereinigten und eine integrierte Schaltung bildenden Halbleiterelementen mit pn-Übergängen
EP0040125A1 (fr) * 1980-05-14 1981-11-18 Thomson-Csf Dispositif de protection contre les courants de fuite dans des circuits intégrés

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279787A (en) * 1975-12-26 1977-07-05 Toshiba Corp Integrated circuit device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0008106A1 (de) * 1978-08-08 1980-02-20 Siemens Aktiengesellschaft Halbleitervorrichtung mit mehreren in einem Halbleiterkristall vereinigten und eine integrierte Schaltung bildenden Halbleiterelementen mit pn-Übergängen
EP0040125A1 (fr) * 1980-05-14 1981-11-18 Thomson-Csf Dispositif de protection contre les courants de fuite dans des circuits intégrés
FR2492165A1 (fr) * 1980-05-14 1982-04-16 Thomson Csf Dispositif de protection contre les courants de fuite dans des circuits integres
EP0040125B1 (fr) 1980-05-14 1983-11-30 Thomson-Csf Dispositif de protection contre les courants de fuite dans des circuits intégrés
US4466011A (en) * 1980-05-14 1984-08-14 Thomson-Csf Device for protection against leakage currents in integrated circuits

Also Published As

Publication number Publication date
IT941368B (it) 1973-03-01
DE2055661B2 (enrdf_load_stackoverflow) 1975-02-13
DE2055661A1 (de) 1972-06-29
FR2113906B1 (enrdf_load_stackoverflow) 1978-06-02

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Legal Events

Date Code Title Description
ST Notification of lapse