US3813558A
(en)
*
|
1972-06-26 |
1974-05-28 |
Ibm |
Directional, non-volatile bistable resistor logic circuits
|
USRE40790E1
(en)
*
|
1992-06-23 |
2009-06-23 |
Micron Technology, Inc. |
Method for making electrical contact with an active area through sub-micron contact openings and a semiconductor device
|
US5229326A
(en)
*
|
1992-06-23 |
1993-07-20 |
Micron Technology, Inc. |
Method for making electrical contact with an active area through sub-micron contact openings and a semiconductor device
|
US5753947A
(en)
*
|
1995-01-20 |
1998-05-19 |
Micron Technology, Inc. |
Very high-density DRAM cell structure and method for fabricating it
|
US5789758A
(en)
*
|
1995-06-07 |
1998-08-04 |
Micron Technology, Inc. |
Chalcogenide memory cell with a plurality of chalcogenide electrodes
|
WO1996041381A1
(en)
*
|
1995-06-07 |
1996-12-19 |
Micron Technology, Inc. |
A stack/trench diode for use with a multi-state material in a non-volatile memory cell
|
US5831276A
(en)
*
|
1995-06-07 |
1998-11-03 |
Micron Technology, Inc. |
Three-dimensional container diode for use with multi-state material in a non-volatile memory cell
|
US5869843A
(en)
*
|
1995-06-07 |
1999-02-09 |
Micron Technology, Inc. |
Memory array having a multi-state element and method for forming such array or cells thereof
|
US6420725B1
(en)
|
1995-06-07 |
2002-07-16 |
Micron Technology, Inc. |
Method and apparatus for forming an integrated circuit electrode having a reduced contact area
|
US5879955A
(en)
*
|
1995-06-07 |
1999-03-09 |
Micron Technology, Inc. |
Method for fabricating an array of ultra-small pores for chalcogenide memory cells
|
US5751012A
(en)
*
|
1995-06-07 |
1998-05-12 |
Micron Technology, Inc. |
Polysilicon pillar diode for use in a non-volatile memory cell
|
US5837564A
(en)
*
|
1995-11-01 |
1998-11-17 |
Micron Technology, Inc. |
Method for optimal crystallization to obtain high electrical performance from chalcogenides
|
US6653733B1
(en)
|
1996-02-23 |
2003-11-25 |
Micron Technology, Inc. |
Conductors in semiconductor devices
|
US6025220A
(en)
|
1996-06-18 |
2000-02-15 |
Micron Technology, Inc. |
Method of forming a polysilicon diode and devices incorporating such diode
|
US6337266B1
(en)
|
1996-07-22 |
2002-01-08 |
Micron Technology, Inc. |
Small electrode for chalcogenide memories
|
US5985698A
(en)
*
|
1996-07-22 |
1999-11-16 |
Micron Technology, Inc. |
Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell
|
US5814527A
(en)
*
|
1996-07-22 |
1998-09-29 |
Micron Technology, Inc. |
Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories
|
US5789277A
(en)
|
1996-07-22 |
1998-08-04 |
Micron Technology, Inc. |
Method of making chalogenide memory device
|
US5998244A
(en)
*
|
1996-08-22 |
1999-12-07 |
Micron Technology, Inc. |
Memory cell incorporating a chalcogenide element and method of making same
|
US5812441A
(en)
*
|
1996-10-21 |
1998-09-22 |
Micron Technology, Inc. |
MOS diode for use in a non-volatile memory cell
|
US6015977A
(en)
|
1997-01-28 |
2000-01-18 |
Micron Technology, Inc. |
Integrated circuit memory cell having a small active area and method of forming same
|
US5952671A
(en)
|
1997-05-09 |
1999-09-14 |
Micron Technology, Inc. |
Small electrode for a chalcogenide switching device and method for fabricating same
|
US6087689A
(en)
|
1997-06-16 |
2000-07-11 |
Micron Technology, Inc. |
Memory cell having a reduced active area and a memory array incorporating the same
|
US6031287A
(en)
*
|
1997-06-18 |
2000-02-29 |
Micron Technology, Inc. |
Contact structure and memory element incorporating the same
|
US6440837B1
(en)
|
2000-07-14 |
2002-08-27 |
Micron Technology, Inc. |
Method of forming a contact structure in a semiconductor device
|
US6563156B2
(en)
|
2001-03-15 |
2003-05-13 |
Micron Technology, Inc. |
Memory elements and methods for making same
|