FR2112024B1 - - Google Patents
Info
- Publication number
- FR2112024B1 FR2112024B1 FR7024545A FR7024545A FR2112024B1 FR 2112024 B1 FR2112024 B1 FR 2112024B1 FR 7024545 A FR7024545 A FR 7024545A FR 7024545 A FR7024545 A FR 7024545A FR 2112024 B1 FR2112024 B1 FR 2112024B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7024545A FR2112024B1 (cg-RX-API-DMAC7.html) | 1970-07-02 | 1970-07-02 | |
| GB2996271A GB1347782A (en) | 1970-07-02 | 1971-06-25 | Integrated circuits comprising mos transistors obtained by ion implanation |
| JP4872371A JPS5535861B1 (cg-RX-API-DMAC7.html) | 1970-07-02 | 1971-07-02 | |
| DE2133055A DE2133055C2 (de) | 1970-07-02 | 1971-07-02 | Integrierte MOS-Transistorschaltung und Verfahren zu ihrer Herstellung |
| US00348029A US3816905A (en) | 1970-07-02 | 1973-04-05 | Complex integrated circuit comprising mos transistors obtained by ion implantation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7024545A FR2112024B1 (cg-RX-API-DMAC7.html) | 1970-07-02 | 1970-07-02 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2112024A1 FR2112024A1 (cg-RX-API-DMAC7.html) | 1972-06-16 |
| FR2112024B1 true FR2112024B1 (cg-RX-API-DMAC7.html) | 1973-11-16 |
Family
ID=9058165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7024545A Expired FR2112024B1 (cg-RX-API-DMAC7.html) | 1970-07-02 | 1970-07-02 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3816905A (cg-RX-API-DMAC7.html) |
| JP (1) | JPS5535861B1 (cg-RX-API-DMAC7.html) |
| DE (1) | DE2133055C2 (cg-RX-API-DMAC7.html) |
| FR (1) | FR2112024B1 (cg-RX-API-DMAC7.html) |
| GB (1) | GB1347782A (cg-RX-API-DMAC7.html) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4080718A (en) * | 1976-12-14 | 1978-03-28 | Smc Standard Microsystems Corporation | Method of modifying electrical characteristics of MOS devices using ion implantation |
| US4364165A (en) * | 1981-05-28 | 1982-12-21 | General Motors Corporation | Late programming using a silicon nitride interlayer |
| US4359817A (en) * | 1981-05-28 | 1982-11-23 | General Motors Corporation | Method for making late programmable read-only memory devices |
| US4365405A (en) * | 1981-05-28 | 1982-12-28 | General Motors Corporation | Method of late programming read only memory devices |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL282170A (cg-RX-API-DMAC7.html) * | 1961-08-17 | |||
| GB1086128A (en) * | 1964-10-23 | 1967-10-04 | Motorola Inc | Fabrication of four-layer switch with controlled breakdown voltage |
| US3312871A (en) * | 1964-12-23 | 1967-04-04 | Ibm | Interconnection arrangement for integrated circuits |
| NL6606083A (cg-RX-API-DMAC7.html) * | 1965-06-22 | 1967-11-06 | Philips Nv | |
| US3472712A (en) * | 1966-10-27 | 1969-10-14 | Hughes Aircraft Co | Field-effect device with insulated gate |
| US3387286A (en) * | 1967-07-14 | 1968-06-04 | Ibm | Field-effect transistor memory |
-
1970
- 1970-07-02 FR FR7024545A patent/FR2112024B1/fr not_active Expired
-
1971
- 1971-06-25 GB GB2996271A patent/GB1347782A/en not_active Expired
- 1971-07-02 DE DE2133055A patent/DE2133055C2/de not_active Expired
- 1971-07-02 JP JP4872371A patent/JPS5535861B1/ja active Pending
-
1973
- 1973-04-05 US US00348029A patent/US3816905A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| GB1347782A (en) | 1974-02-27 |
| DE2133055C2 (de) | 1983-08-11 |
| US3816905A (en) | 1974-06-18 |
| JPS5535861B1 (cg-RX-API-DMAC7.html) | 1980-09-17 |
| DE2133055A1 (de) | 1972-01-20 |
| FR2112024A1 (cg-RX-API-DMAC7.html) | 1972-06-16 |