FR2111866B1 - - Google Patents

Info

Publication number
FR2111866B1
FR2111866B1 FR7138633A FR7138633A FR2111866B1 FR 2111866 B1 FR2111866 B1 FR 2111866B1 FR 7138633 A FR7138633 A FR 7138633A FR 7138633 A FR7138633 A FR 7138633A FR 2111866 B1 FR2111866 B1 FR 2111866B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7138633A
Other languages
French (fr)
Other versions
FR2111866A1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP45094482A external-priority patent/JPS5036955B1/ja
Application filed by Individual filed Critical Individual
Publication of FR2111866A1 publication Critical patent/FR2111866A1/fr
Application granted granted Critical
Publication of FR2111866B1 publication Critical patent/FR2111866B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/68Floating-gate IGFETs
    • H10D30/6891Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6893Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/68Floating-gate IGFETs
    • H10D30/681Floating-gate IGFETs having only two programming levels
    • H10D30/683Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Non-Volatile Memory (AREA)
FR7138633A 1970-10-27 1971-10-27 Expired FR2111866B1 (enrdf_load_stackoverflow)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP45094482A JPS5036955B1 (enrdf_load_stackoverflow) 1970-10-27 1970-10-27
JP1895971A JPS5641182B1 (enrdf_load_stackoverflow) 1970-10-27 1971-03-30

Publications (2)

Publication Number Publication Date
FR2111866A1 FR2111866A1 (enrdf_load_stackoverflow) 1972-06-09
FR2111866B1 true FR2111866B1 (enrdf_load_stackoverflow) 1976-10-29

Family

ID=26355728

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7138633A Expired FR2111866B1 (enrdf_load_stackoverflow) 1970-10-27 1971-10-27

Country Status (2)

Country Link
DE (1) DE7139683U (enrdf_load_stackoverflow)
FR (1) FR2111866B1 (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0118506A1 (en) * 1982-08-12 1984-09-19 Ncr Corporation Non-volatile semiconductor memory device
JPS5955071A (ja) * 1982-09-24 1984-03-29 Hitachi Micro Comput Eng Ltd 不揮発性半導体装置
US6753568B1 (en) 1996-11-15 2004-06-22 Hitachi, Ltd. Memory device
EP0843360A1 (en) * 1996-11-15 1998-05-20 Hitachi Europe Limited Memory device
US6642574B2 (en) 1997-10-07 2003-11-04 Hitachi, Ltd. Semiconductor memory device and manufacturing method thereof
US6169308B1 (en) 1996-11-15 2001-01-02 Hitachi, Ltd. Semiconductor memory device and manufacturing method thereof
EP0843361A1 (en) * 1996-11-15 1998-05-20 Hitachi Europe Limited Memory device

Also Published As

Publication number Publication date
DE7139683U (de) 1972-09-21
FR2111866A1 (enrdf_load_stackoverflow) 1972-06-09

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Legal Events

Date Code Title Description
TP Transmission of property