FR2111866A1 - - Google Patents

Info

Publication number
FR2111866A1
FR2111866A1 FR7138633A FR7138633A FR2111866A1 FR 2111866 A1 FR2111866 A1 FR 2111866A1 FR 7138633 A FR7138633 A FR 7138633A FR 7138633 A FR7138633 A FR 7138633A FR 2111866 A1 FR2111866 A1 FR 2111866A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7138633A
Other languages
French (fr)
Other versions
FR2111866B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP45094482A external-priority patent/JPS5036955B1/ja
Application filed by Individual filed Critical Individual
Publication of FR2111866A1 publication Critical patent/FR2111866A1/fr
Application granted granted Critical
Publication of FR2111866B1 publication Critical patent/FR2111866B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42316Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324Gate electrodes for transistors with a floating gate
    • H01L29/42332Gate electrodes for transistors with a floating gate with the floating gate formed by two or more non connected parts, e.g. multi-particles flating gate
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/788Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881Programmable transistors with only two possible levels of programmation
    • H01L29/7883Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
FR7138633A 1970-10-27 1971-10-27 Expired FR2111866B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP45094482A JPS5036955B1 (en) 1970-10-27 1970-10-27
JP1895971A JPS5641182B1 (en) 1970-10-27 1971-03-30

Publications (2)

Publication Number Publication Date
FR2111866A1 true FR2111866A1 (en) 1972-06-09
FR2111866B1 FR2111866B1 (en) 1976-10-29

Family

ID=26355728

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7138633A Expired FR2111866B1 (en) 1970-10-27 1971-10-27

Country Status (2)

Country Link
DE (1) DE7139683U (en)
FR (1) FR2111866B1 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1984000852A1 (en) * 1982-08-12 1984-03-01 Ncr Co Non-volatile semiconductor memory device
FR2533740A1 (en) * 1982-09-24 1984-03-30 Hitachi Ltd REMANENT MEMORY
EP0843361A1 (en) * 1996-11-15 1998-05-20 Hitachi Europe Limited Memory device
EP0843360A1 (en) * 1996-11-15 1998-05-20 Hitachi Europe Limited Memory device
US6169308B1 (en) 1996-11-15 2001-01-02 Hitachi, Ltd. Semiconductor memory device and manufacturing method thereof
US6642574B2 (en) 1997-10-07 2003-11-04 Hitachi, Ltd. Semiconductor memory device and manufacturing method thereof
US6753568B1 (en) 1996-11-15 2004-06-22 Hitachi, Ltd. Memory device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1984000852A1 (en) * 1982-08-12 1984-03-01 Ncr Co Non-volatile semiconductor memory device
FR2533740A1 (en) * 1982-09-24 1984-03-30 Hitachi Ltd REMANENT MEMORY
EP0843361A1 (en) * 1996-11-15 1998-05-20 Hitachi Europe Limited Memory device
EP0843360A1 (en) * 1996-11-15 1998-05-20 Hitachi Europe Limited Memory device
US5952692A (en) * 1996-11-15 1999-09-14 Hitachi, Ltd. Memory device with improved charge storage barrier structure
US6169308B1 (en) 1996-11-15 2001-01-02 Hitachi, Ltd. Semiconductor memory device and manufacturing method thereof
US6753568B1 (en) 1996-11-15 2004-06-22 Hitachi, Ltd. Memory device
US6825527B2 (en) 1996-11-15 2004-11-30 Hitachi, Ltd. Semiconductor memory device and manufacturing method
US6642574B2 (en) 1997-10-07 2003-11-04 Hitachi, Ltd. Semiconductor memory device and manufacturing method thereof

Also Published As

Publication number Publication date
DE7139683U (en) 1972-09-21
FR2111866B1 (en) 1976-10-29

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Legal Events

Date Code Title Description
TP Transmission of property