FR2110326A1 - - Google Patents

Info

Publication number
FR2110326A1
FR2110326A1 FR7136321A FR7136321A FR2110326A1 FR 2110326 A1 FR2110326 A1 FR 2110326A1 FR 7136321 A FR7136321 A FR 7136321A FR 7136321 A FR7136321 A FR 7136321A FR 2110326 A1 FR2110326 A1 FR 2110326A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7136321A
Other versions
FR2110326B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of FR2110326A1 publication Critical patent/FR2110326A1/fr
Application granted granted Critical
Publication of FR2110326B1 publication Critical patent/FR2110326B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Semiconductor Memories (AREA)
FR7136321A 1970-10-09 1971-10-08 Expired FR2110326B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8912970A JPS509156B1 (fr) 1970-10-09 1970-10-09

Publications (2)

Publication Number Publication Date
FR2110326A1 true FR2110326A1 (fr) 1972-06-02
FR2110326B1 FR2110326B1 (fr) 1977-04-22

Family

ID=13962261

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7136321A Expired FR2110326B1 (fr) 1970-10-09 1971-10-08

Country Status (5)

Country Link
JP (1) JPS509156B1 (fr)
CA (1) CA924420A (fr)
FR (1) FR2110326B1 (fr)
GB (1) GB1367325A (fr)
NL (1) NL7113825A (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0190931A2 (fr) * 1985-02-05 1986-08-13 Mitsubishi Denki Kabushiki Kaisha Dispositif monolithique MOS bipolaire de commutation
WO1999063598A1 (fr) * 1998-06-05 1999-12-09 Stanford University Dispositif de commutation de courant de semi-conducteur possedant un dispositif d'amelioration operationnel et procede correspond
US6583452B1 (en) 2001-12-17 2003-06-24 T-Ram, Inc. Thyristor-based device having extended capacitive coupling
US6690038B1 (en) 1999-06-05 2004-02-10 T-Ram, Inc. Thyristor-based device over substrate surface
US6727528B1 (en) 2001-03-22 2004-04-27 T-Ram, Inc. Thyristor-based device including trench dielectric isolation for thyristor-body regions
US6804162B1 (en) 2001-04-05 2004-10-12 T-Ram, Inc. Read-modify-write memory using read-or-write banks
US6832300B2 (en) 2002-03-20 2004-12-14 Hewlett-Packard Development Company, L.P. Methods and apparatus for control of asynchronous cache
US6965129B1 (en) 2002-11-06 2005-11-15 T-Ram, Inc. Thyristor-based device having dual control ports

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4364073A (en) 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region
US4595941A (en) * 1980-12-03 1986-06-17 Rca Corporation Protection circuit for integrated circuit devices
US7224002B2 (en) * 2004-05-06 2007-05-29 Micron Technology, Inc. Silicon on insulator read-write non-volatile memory comprising lateral thyristor and trapping layer

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0190931A2 (fr) * 1985-02-05 1986-08-13 Mitsubishi Denki Kabushiki Kaisha Dispositif monolithique MOS bipolaire de commutation
EP0190931A3 (en) * 1985-02-05 1986-11-26 Mitsubishi Denki Kabushiki Kaisha Monolithic bipolar mos switching device
US4941030A (en) * 1985-02-05 1990-07-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US6653174B1 (en) 1998-06-05 2003-11-25 T-Ram, Inc. Thyristor-based device over substrate surface
US6967358B2 (en) 1998-06-05 2005-11-22 The Board Of Trustees Of The Leland Stanford Junior University Thyristor-type memory device
US6448586B1 (en) 1998-06-05 2002-09-10 The Board Of Trustees Of The Leland Standford Junior University Semiconductor current-switching device having operational enhancer and method therefor
US6528356B2 (en) 1998-06-05 2003-03-04 The Board Of Trustees Of The Leland Stanford Junior University Manufacture of semiconductor capacitively-coupled NDR device for applications such as high-density high-speed memories and power switches
US6229161B1 (en) 1998-06-05 2001-05-08 Stanford University Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches
WO1999063598A1 (fr) * 1998-06-05 1999-12-09 Stanford University Dispositif de commutation de courant de semi-conducteur possedant un dispositif d'amelioration operationnel et procede correspond
US6690038B1 (en) 1999-06-05 2004-02-10 T-Ram, Inc. Thyristor-based device over substrate surface
US6727528B1 (en) 2001-03-22 2004-04-27 T-Ram, Inc. Thyristor-based device including trench dielectric isolation for thyristor-body regions
US6777271B1 (en) 2001-03-22 2004-08-17 T-Ram, Inc. Thyristor-based device including trench isolation
US6804162B1 (en) 2001-04-05 2004-10-12 T-Ram, Inc. Read-modify-write memory using read-or-write banks
US7236421B1 (en) 2001-04-05 2007-06-26 T-Ram Semiconductor, Inc. Read-modify-write memory using read-or-write banks
US6583452B1 (en) 2001-12-17 2003-06-24 T-Ram, Inc. Thyristor-based device having extended capacitive coupling
US6832300B2 (en) 2002-03-20 2004-12-14 Hewlett-Packard Development Company, L.P. Methods and apparatus for control of asynchronous cache
US6965129B1 (en) 2002-11-06 2005-11-15 T-Ram, Inc. Thyristor-based device having dual control ports
US7320895B1 (en) 2002-11-06 2008-01-22 T-Ram Semiconductor, Inc. Thyristor-based device having dual control ports

Also Published As

Publication number Publication date
FR2110326B1 (fr) 1977-04-22
AU3395971A (en) 1973-04-05
CA924420A (en) 1973-04-10
DE2149761A1 (de) 1972-04-13
GB1367325A (en) 1974-09-18
DE2149761B2 (de) 1976-08-05
JPS509156B1 (fr) 1975-04-10
NL7113825A (fr) 1972-04-11

Similar Documents

Publication Publication Date Title
AR204384A1 (fr)
ATA96471A (fr)
AU1146470A (fr)
AU1473870A (fr)
AU2044470A (fr)
AU1833270A (fr)
AU1336970A (fr)
AU1716970A (fr)
AU2017870A (fr)
AU1326870A (fr)
AU1517670A (fr)
AU2085370A (fr)
AR195465A1 (fr)
AU1591370A (fr)
AU1872870A (fr)
AU2144270A (fr)
AU1277070A (fr)
AU1343870A (fr)
AU1247570A (fr)
AU2131570A (fr)
AU2130770A (fr)
AU2130570A (fr)
AU1235770A (fr)
AU1581370A (fr)
AU1189670A (fr)

Legal Events

Date Code Title Description
ST Notification of lapse