FR2105085B1 - - Google Patents
Info
- Publication number
- FR2105085B1 FR2105085B1 FR7034485A FR7034485A FR2105085B1 FR 2105085 B1 FR2105085 B1 FR 2105085B1 FR 7034485 A FR7034485 A FR 7034485A FR 7034485 A FR7034485 A FR 7034485A FR 2105085 B1 FR2105085 B1 FR 2105085B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7034485A FR2105085A1 (en) | 1970-09-23 | 1970-09-23 | Insulated gate field effect transistor - using silicon nitride mask for selective oxidation |
DE19712147569 DE2147569A1 (de) | 1970-09-23 | 1971-09-23 | Verfahren zur Herstellung eines Feldeffekttransistors mit isolierter Steuerelektrode und nach diesem Verfahren erhaltener Feldeffekttransistor |
GB4443571A GB1374112A (en) | 1970-09-23 | 1971-09-23 | Method of fabrication of an insulated gate field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7034485A FR2105085A1 (en) | 1970-09-23 | 1970-09-23 | Insulated gate field effect transistor - using silicon nitride mask for selective oxidation |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2105085A1 FR2105085A1 (en) | 1972-04-28 |
FR2105085B1 true FR2105085B1 (ja) | 1976-07-23 |
Family
ID=9061746
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7034485A Granted FR2105085A1 (en) | 1970-09-23 | 1970-09-23 | Insulated gate field effect transistor - using silicon nitride mask for selective oxidation |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2105085A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112103267A (zh) * | 2020-10-26 | 2020-12-18 | 北京燕东微电子科技有限公司 | 一种半导体器件及其制造方法 |
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1970
- 1970-09-23 FR FR7034485A patent/FR2105085A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2105085A1 (en) | 1972-04-28 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |