FR2096470A1 - - Google Patents

Info

Publication number
FR2096470A1
FR2096470A1 FR7123127A FR7123127A FR2096470A1 FR 2096470 A1 FR2096470 A1 FR 2096470A1 FR 7123127 A FR7123127 A FR 7123127A FR 7123127 A FR7123127 A FR 7123127A FR 2096470 A1 FR2096470 A1 FR 2096470A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7123127A
Other languages
French (fr)
Other versions
FR2096470B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19702031071 external-priority patent/DE2031071C3/de
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of FR2096470A1 publication Critical patent/FR2096470A1/fr
Application granted granted Critical
Publication of FR2096470B1 publication Critical patent/FR2096470B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H10W74/131
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • H10P54/00
    • H10W74/40
FR7123127A 1970-06-24 1971-06-24 Expired FR2096470B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702031071 DE2031071C3 (de) 1970-06-24 Verfahren zum Herstellen von Dioden

Publications (2)

Publication Number Publication Date
FR2096470A1 true FR2096470A1 (enExample) 1972-02-18
FR2096470B1 FR2096470B1 (enExample) 1974-04-05

Family

ID=5774753

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7123127A Expired FR2096470B1 (enExample) 1970-06-24 1971-06-24

Country Status (3)

Country Link
US (1) US3781975A (enExample)
FR (1) FR2096470B1 (enExample)
GB (1) GB1315479A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2406307A1 (fr) * 1977-10-17 1979-05-11 Radiotechnique Compelec Dispositif semiconducteur a surface passivee et procede d'obtention de ce dispositif
EP0527744A4 (en) * 1990-04-30 1993-11-03 Bell Communications Research, Inc. Patterning method for epitaxial lift-off processing

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4023258A (en) * 1976-03-05 1977-05-17 Bell Telephone Laboratories, Incorporated Method of manufacturing semiconductor diodes for use in millimeter-wave circuits
US4023260A (en) * 1976-03-05 1977-05-17 Bell Telephone Laboratories, Incorporated Method of manufacturing semiconductor diodes for use in millimeter-wave circuits
US4012832A (en) * 1976-03-12 1977-03-22 Sperry Rand Corporation Method for non-destructive removal of semiconductor devices
GB1532286A (en) * 1976-10-07 1978-11-15 Elliott Bros Manufacture of electro-luminescent display devices
US4286374A (en) * 1979-02-24 1981-09-01 International Computers Limited Large scale integrated circuit production
US4499659A (en) * 1982-10-18 1985-02-19 Raytheon Company Semiconductor structures and manufacturing methods
US4980315A (en) * 1988-07-18 1990-12-25 General Instrument Corporation Method of making a passivated P-N junction in mesa semiconductor structure
US5166769A (en) * 1988-07-18 1992-11-24 General Instrument Corporation Passitvated mesa semiconductor and method for making same
US5179035A (en) * 1989-09-15 1993-01-12 U.S. Philips Corporation Method of fabricating two-terminal non-linear devices
GB2237143A (en) * 1989-09-15 1991-04-24 Philips Electronic Associated Two-terminal non-linear devices and their fabrication
DE4319944C2 (de) * 1993-06-03 1998-07-23 Schulz Harder Juergen Mehrfach-Substrat sowie Verfahren zu seiner Herstellung
US5545291A (en) * 1993-12-17 1996-08-13 The Regents Of The University Of California Method for fabricating self-assembling microstructures
US6864570B2 (en) * 1993-12-17 2005-03-08 The Regents Of The University Of California Method and apparatus for fabricating self-assembling microstructures
FR2788375B1 (fr) * 1999-01-11 2003-07-18 Gemplus Card Int Procede de protection de puce de circuit integre

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2930107A (en) * 1953-07-16 1960-03-29 Sylvania Electric Prod Semiconductor mount and method
GB1104935A (en) * 1964-05-08 1968-03-06 Standard Telephones Cables Ltd Improvements in or relating to a method of forming a layer of an inorganic compound
US3432919A (en) * 1966-10-31 1969-03-18 Raytheon Co Method of making semiconductor diodes
GB1182820A (en) * 1967-06-27 1970-03-04 Westinghouse Brake & Signal Manufacture of Semiconductor Elements.
US3591477A (en) * 1968-07-17 1971-07-06 Mallory & Co Inc P R Process for growth and removal of passivating films in semiconductors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2406307A1 (fr) * 1977-10-17 1979-05-11 Radiotechnique Compelec Dispositif semiconducteur a surface passivee et procede d'obtention de ce dispositif
EP0527744A4 (en) * 1990-04-30 1993-11-03 Bell Communications Research, Inc. Patterning method for epitaxial lift-off processing

Also Published As

Publication number Publication date
GB1315479A (en) 1973-05-02
DE2031071B2 (de) 1976-01-08
DE2031071A1 (de) 1972-01-05
FR2096470B1 (enExample) 1974-04-05
US3781975A (en) 1974-01-01

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Legal Events

Date Code Title Description
ST Notification of lapse