FR2077621A1 - - Google Patents
Info
- Publication number
- FR2077621A1 FR2077621A1 FR7102558A FR7102558A FR2077621A1 FR 2077621 A1 FR2077621 A1 FR 2077621A1 FR 7102558 A FR7102558 A FR 7102558A FR 7102558 A FR7102558 A FR 7102558A FR 2077621 A1 FR2077621 A1 FR 2077621A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US580570A | 1970-01-26 | 1970-01-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2077621A1 true FR2077621A1 (US20090163788A1-20090625-C00002.png) | 1971-10-29 |
FR2077621B1 FR2077621B1 (US20090163788A1-20090625-C00002.png) | 1973-11-23 |
Family
ID=21717842
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7102558A Expired FR2077621B1 (US20090163788A1-20090625-C00002.png) | 1970-01-26 | 1971-01-26 |
Country Status (4)
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2135118B (en) * | 1983-02-09 | 1986-10-08 | Westinghouse Brake & Signal | Thyristors |
US4605451A (en) * | 1984-08-08 | 1986-08-12 | Westinghouse Brake And Signal Company Limited | Process for making thyristor devices |
DE102009033302B4 (de) | 2009-07-15 | 2012-01-26 | Infineon Technologies Ag | Herstellungsverfahren für ein unipolares Halbleiter-Bauelement und Halbleitervorrichtung |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1297586A (fr) * | 1960-09-20 | 1962-06-29 | Western Electric Co | Dispositif semi-conducteur et procédé de fabrication |
FR1321379A (fr) * | 1961-05-10 | 1963-03-15 | Siemens Ag | Procédé pour réaliser une jonction p-n dans un dispositif à semi-conducteur monocristallin |
GB967069A (en) * | 1959-12-30 | 1964-08-19 | Ibm | Semiconductor junctions having a retrograde distribution of impurities |
FR1515661A (fr) * | 1966-03-28 | 1968-03-01 | Ass Elect Ind | Perfectionnements aux procédés de fabrication de dispositifs semiconducteurs et produits obtenus |
-
1971
- 1971-01-25 SE SE83271A patent/SE372375B/xx unknown
- 1971-01-26 FR FR7102558A patent/FR2077621B1/fr not_active Expired
- 1971-01-26 DE DE19712103389 patent/DE2103389A1/de active Pending
- 1971-04-19 GB GB2035071A patent/GB1351867A/en not_active Expired
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB967069A (en) * | 1959-12-30 | 1964-08-19 | Ibm | Semiconductor junctions having a retrograde distribution of impurities |
FR1297586A (fr) * | 1960-09-20 | 1962-06-29 | Western Electric Co | Dispositif semi-conducteur et procédé de fabrication |
FR1321379A (fr) * | 1961-05-10 | 1963-03-15 | Siemens Ag | Procédé pour réaliser une jonction p-n dans un dispositif à semi-conducteur monocristallin |
FR1515661A (fr) * | 1966-03-28 | 1968-03-01 | Ass Elect Ind | Perfectionnements aux procédés de fabrication de dispositifs semiconducteurs et produits obtenus |
Also Published As
Publication number | Publication date |
---|---|
SE372375B (US20090163788A1-20090625-C00002.png) | 1974-12-16 |
GB1351867A (en) | 1974-05-01 |
DE2103389A1 (de) | 1971-08-05 |
FR2077621B1 (US20090163788A1-20090625-C00002.png) | 1973-11-23 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |