FR2071788A5 - - Google Patents

Info

Publication number
FR2071788A5
FR2071788A5 FR7037876A FR7037876A FR2071788A5 FR 2071788 A5 FR2071788 A5 FR 2071788A5 FR 7037876 A FR7037876 A FR 7037876A FR 7037876 A FR7037876 A FR 7037876A FR 2071788 A5 FR2071788 A5 FR 2071788A5
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7037876A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of FR2071788A5 publication Critical patent/FR2071788A5/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
FR7037876A 1969-11-26 1970-10-13 Expired FR2071788A5 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US88027369A 1969-11-26 1969-11-26

Publications (1)

Publication Number Publication Date
FR2071788A5 true FR2071788A5 (en) 1971-09-17

Family

ID=25375921

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7037876A Expired FR2071788A5 (en) 1969-11-26 1970-10-13

Country Status (5)

Country Link
US (1) US3621213A (en)
CA (1) CA935743A (en)
DE (1) DE2047198C3 (en)
FR (1) FR2071788A5 (en)
GB (1) GB1311558A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0134680A2 (en) * 1983-07-29 1985-03-20 Kabushiki Kaisha Toshiba Apparatus for manufacturing a single crystal
FR2553793A1 (en) * 1983-10-19 1985-04-26 Crismatec METHOD FOR CONTROLLING SINGLE CRYSTAL DRAWING MACHINE
EP0285943A1 (en) * 1987-03-31 1988-10-12 Shin-Etsu Handotai Company, Limited Crystal diameter controlling method
EP0444628A1 (en) * 1990-02-28 1991-09-04 Shin-Etsu Handotai Company Limited Method of automatic control of growing neck portion of a single crystal by the CZ method
EP0499220A1 (en) * 1991-02-14 1992-08-19 Shin-Etsu Handotai Company, Limited Automatic control method for growing single-crystal neck portions
EP0536405A1 (en) * 1991-04-26 1993-04-14 Mitsubishi Materials Corporation Process for pulling up single crystal
USRE34375E (en) * 1987-05-05 1993-09-14 Mobil Solar Energy Corporation System for controlling apparatus for growing tubular crystalline bodies
WO2000022201A1 (en) * 1998-10-14 2000-04-20 Memc Electronic Materials, Inc. Method and apparatus for accurately pulling a crystal
US6726764B2 (en) 2000-02-01 2004-04-27 Memc Electronic Materials, Inc. Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3805044A (en) * 1971-04-07 1974-04-16 Western Electric Co Computerized process control system for the growth of synthetic quartz crystals
US3740563A (en) * 1971-06-25 1973-06-19 Monsanto Co Electroptical system and method for sensing and controlling the diameter and melt level of pulled crystals
JPS5027480B1 (en) * 1971-07-28 1975-09-08
US3761692A (en) * 1971-10-01 1973-09-25 Texas Instruments Inc Automated crystal pulling system
US3870477A (en) * 1972-07-10 1975-03-11 Tyco Laboratories Inc Optical control of crystal growth
US3882319A (en) * 1973-10-23 1975-05-06 Motorola Inc Automatic melt level control for growth of semiconductor crystals
US3998598A (en) * 1973-11-23 1976-12-21 Semimetals, Inc. Automatic diameter control for crystal growing facilities
GB1478192A (en) * 1974-03-29 1977-06-29 Nat Res Dev Automatically controlled crystal growth
GB1465191A (en) * 1974-03-29 1977-02-23 Nat Res Dev Automatically controlled crystal growth
DE2446293C2 (en) * 1974-04-03 1986-01-30 National Research Development Corp., London Device for regulating the rod cross-section during Czochralski drawing
US4207293A (en) * 1974-06-14 1980-06-10 Varian Associates, Inc. Circumferential error signal apparatus for crystal rod pulling
US4350557A (en) * 1974-06-14 1982-09-21 Ferrofluidics Corporation Method for circumferential dimension measuring and control in crystal rod pulling
US4025386A (en) * 1974-12-20 1977-05-24 Union Carbide Corporation Method for producing r-plane single crystal alpha alumina in massive form having substantially circular cross-section
DE2516197C3 (en) * 1975-04-14 1982-02-04 Schweizerische Aluminium AG, 3965 Chippis Weighing device for automatic control of the diameter of a crystal when pulling it out of a crucible
US4058429A (en) * 1975-12-04 1977-11-15 Westinghouse Electric Corporation Infrared temperature control of Czochralski crystal growth
US4080172A (en) * 1975-12-29 1978-03-21 Monsanto Company Zone refiner automatic control
US4289572A (en) * 1976-12-27 1981-09-15 Dow Corning Corporation Method of closing silicon tubular bodies
US4135204A (en) * 1977-06-09 1979-01-16 Chesebrough-Pond's Inc. Automatic glass blowing apparatus and method
DE3069547D1 (en) * 1980-06-26 1984-12-06 Ibm Process for controlling the oxygen content of silicon ingots pulled by the czochralski method
US4511428A (en) * 1982-07-09 1985-04-16 International Business Machines Corporation Method of controlling oxygen content and distribution in grown silicon crystals
US4633954A (en) * 1983-12-05 1987-01-06 Otis Engineering Corporation Well production controller system
DE3480721D1 (en) * 1984-08-31 1990-01-18 Gakei Denki Seisakusho METHOD AND DEVICE FOR PRODUCING SINGLE CRYSTALS.
US4794534A (en) * 1985-08-08 1988-12-27 Amoco Corporation Method of drilling a well utilizing predictive simulation with real time data
GB8715327D0 (en) * 1987-06-30 1987-08-05 Secr Defence Growth of semiconductor singel crystals
JP2678383B2 (en) * 1989-05-30 1997-11-17 信越半導体 株式会社 Device for single crystal
US5325229A (en) * 1993-05-10 1994-06-28 Phillips Petroleum Company Temperature control of crystals used in optical oscillators
US5560759A (en) * 1994-11-14 1996-10-01 Lucent Technologies Inc. Core insertion method for making optical fiber preforms and optical fibers fabricated therefrom
JP2966322B2 (en) * 1995-02-27 1999-10-25 三菱マテリアルシリコン株式会社 Silicon single crystal ingot and manufacturing method thereof
US5888299A (en) * 1995-12-27 1999-03-30 Shin-Etsu Handotai Co., Ltd. Apparatus for adjusting initial position of melt surface
JPH09255485A (en) * 1996-03-15 1997-09-30 Shin Etsu Handotai Co Ltd Production of single crystal and seed crystal
DE69601424T2 (en) * 1996-06-27 1999-06-02 Wacker Siltronic Halbleitermat Method and device for controlling crystal growth
JP3444178B2 (en) * 1998-02-13 2003-09-08 信越半導体株式会社 Single crystal manufacturing method
US6453219B1 (en) 1999-09-23 2002-09-17 Kic Thermal Profiling Method and apparatus for controlling temperature response of a part in a conveyorized thermal processor
US6560514B1 (en) 1999-09-23 2003-05-06 Kic Thermal Profiling Method and apparatus for optimizing control of a part temperature in conveyorized thermal processor
US6283379B1 (en) 2000-02-14 2001-09-04 Kic Thermal Profiling Method for correlating processor and part temperatures using an air temperature sensor for a conveyorized thermal processor
KR20140059823A (en) * 2011-08-26 2014-05-16 콘삭 코퍼레이션 Purification of a metalloid by consumable electrode vacuum arc remelt process
US11414778B2 (en) 2019-07-29 2022-08-16 Globalwafers Co., Ltd. Production and use of dynamic state charts when growing a single crystal silicon ingot

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3246550A (en) * 1959-11-02 1966-04-19 Pittsburgh Plate Glass Co Length and area partitioning methods and apparatus

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0134680A3 (en) * 1983-07-29 1987-07-15 Kabushiki Kaisha Toshiba Apparatus for manufacturing a single crystal
EP0134680A2 (en) * 1983-07-29 1985-03-20 Kabushiki Kaisha Toshiba Apparatus for manufacturing a single crystal
FR2553793A1 (en) * 1983-10-19 1985-04-26 Crismatec METHOD FOR CONTROLLING SINGLE CRYSTAL DRAWING MACHINE
EP0142415A2 (en) * 1983-10-19 1985-05-22 Commissariat A L'energie Atomique Contol process for a single crystal pulling apparatus
EP0142415A3 (en) * 1983-10-19 1985-06-19 Crismatec Contol process for a single crystal pulling apparatus
EP0285943A1 (en) * 1987-03-31 1988-10-12 Shin-Etsu Handotai Company, Limited Crystal diameter controlling method
USRE34375E (en) * 1987-05-05 1993-09-14 Mobil Solar Energy Corporation System for controlling apparatus for growing tubular crystalline bodies
EP0444628A1 (en) * 1990-02-28 1991-09-04 Shin-Etsu Handotai Company Limited Method of automatic control of growing neck portion of a single crystal by the CZ method
US5183528A (en) * 1990-02-28 1993-02-02 Shin-Etsu Handotai Company, Limited Method of automatic control of growing neck portion of a single crystal by the cz method
EP0499220A1 (en) * 1991-02-14 1992-08-19 Shin-Etsu Handotai Company, Limited Automatic control method for growing single-crystal neck portions
US5288363A (en) * 1991-02-14 1994-02-22 Shin-Etsu Handotai Company, Ltd. Automatic control method for growing single-crystal neck portions
EP0536405A1 (en) * 1991-04-26 1993-04-14 Mitsubishi Materials Corporation Process for pulling up single crystal
EP0536405A4 (en) * 1991-04-26 1995-11-15 Mitsubishi Materials Corp Process for pulling up single crystal
WO2000022201A1 (en) * 1998-10-14 2000-04-20 Memc Electronic Materials, Inc. Method and apparatus for accurately pulling a crystal
US6726764B2 (en) 2000-02-01 2004-04-27 Memc Electronic Materials, Inc. Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations

Also Published As

Publication number Publication date
DE2047198C3 (en) 1974-04-25
US3621213A (en) 1971-11-16
DE2047198A1 (en) 1971-07-29
DE2047198B2 (en) 1973-09-13
GB1311558A (en) 1973-03-28
CA935743A (en) 1973-10-23

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Legal Events

Date Code Title Description
ST Notification of lapse