FR2070213B1 - - Google Patents

Info

Publication number
FR2070213B1
FR2070213B1 FR7043169A FR7043169A FR2070213B1 FR 2070213 B1 FR2070213 B1 FR 2070213B1 FR 7043169 A FR7043169 A FR 7043169A FR 7043169 A FR7043169 A FR 7043169A FR 2070213 B1 FR2070213 B1 FR 2070213B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7043169A
Other languages
French (fr)
Other versions
FR2070213A1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2070213A1 publication Critical patent/FR2070213A1/fr
Application granted granted Critical
Publication of FR2070213B1 publication Critical patent/FR2070213B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/965—Shaped junction formation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/98—Utilizing process equivalents or options
FR7043169A 1969-12-01 1970-12-01 Expired FR2070213B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5851469 1969-12-01

Publications (2)

Publication Number Publication Date
FR2070213A1 FR2070213A1 (enExample) 1971-09-10
FR2070213B1 true FR2070213B1 (enExample) 1974-09-20

Family

ID=10481809

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7043169A Expired FR2070213B1 (enExample) 1969-12-01 1970-12-01

Country Status (8)

Country Link
US (1) US3729811A (enExample)
BE (1) BE759667A (enExample)
CH (1) CH520405A (enExample)
DE (1) DE2058442C3 (enExample)
FR (1) FR2070213B1 (enExample)
GB (1) GB1327755A (enExample)
NL (1) NL163671C (enExample)
SE (1) SE366150B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3856578A (en) * 1972-03-13 1974-12-24 Bell Telephone Labor Inc Bipolar transistors and method of manufacture
SE361232B (enExample) * 1972-11-09 1973-10-22 Ericsson Telefon Ab L M
US3793088A (en) * 1972-11-15 1974-02-19 Bell Telephone Labor Inc Compatible pnp and npn devices in an integrated circuit
US3901735A (en) * 1973-09-10 1975-08-26 Nat Semiconductor Corp Integrated circuit device and method utilizing ion implanted and up diffusion for isolated region
GB1492447A (en) * 1974-07-25 1977-11-16 Siemens Ag Semiconductor devices
US4001050A (en) * 1975-11-10 1977-01-04 Ncr Corporation Method of fabricating an isolated p-n junction
NL8902271A (nl) * 1989-09-12 1991-04-02 Philips Nv Werkwijze voor het verbinden van twee lichamen.
US7189606B2 (en) * 2002-06-05 2007-03-13 Micron Technology, Inc. Method of forming fully-depleted (FD) SOI MOSFET access transistor
US8598025B2 (en) 2010-11-15 2013-12-03 Varian Semiconductor Equipment Associates, Inc. Doping of planar or three-dimensional structures at elevated temperatures

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3413531A (en) * 1966-09-06 1968-11-26 Ion Physics Corp High frequency field effect transistor
US3534235A (en) * 1967-04-17 1970-10-13 Hughes Aircraft Co Igfet with offset gate and biconductivity channel region
US3515956A (en) * 1967-10-16 1970-06-02 Ion Physics Corp High-voltage semiconductor device having a guard ring containing substitutionally active ions in interstitial positions
US3655457A (en) * 1968-08-06 1972-04-11 Ibm Method of making or modifying a pn-junction by ion implantation
GB1263009A (en) * 1969-03-31 1972-02-09 Tokyo Shibaura Electric Co A method for manufacturing a semiconductor device and such device prepared thereby
US3622382A (en) * 1969-05-05 1971-11-23 Ibm Semiconductor isolation structure and method of producing

Also Published As

Publication number Publication date
DE2058442C3 (de) 1978-11-02
SE366150B (enExample) 1974-04-08
NL163671B (nl) 1980-04-15
FR2070213A1 (enExample) 1971-09-10
GB1327755A (en) 1973-08-22
DE2058442A1 (de) 1971-06-09
BE759667A (fr) 1971-06-01
NL163671C (nl) 1980-09-15
DE2058442B2 (de) 1978-03-09
US3729811A (en) 1973-05-01
CH520405A (de) 1972-03-15
NL7017273A (enExample) 1971-06-03

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Legal Events

Date Code Title Description
ST Notification of lapse