FR2068704A7 - - Google Patents
Info
- Publication number
- FR2068704A7 FR2068704A7 FR7042785A FR7042785A FR2068704A7 FR 2068704 A7 FR2068704 A7 FR 2068704A7 FR 7042785 A FR7042785 A FR 7042785A FR 7042785 A FR7042785 A FR 7042785A FR 2068704 A7 FR2068704 A7 FR 2068704A7
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19691959817 DE1959817A1 (de) | 1969-11-28 | 1969-11-28 | Zenerdiode |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2068704A7 true FR2068704A7 (fr) | 1971-08-27 |
Family
ID=5752392
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7042785A Expired FR2068704A7 (fr) | 1969-11-28 | 1970-11-27 |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE1959817A1 (fr) |
FR (1) | FR2068704A7 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4079402A (en) * | 1973-07-09 | 1978-03-14 | National Semiconductor Corporation | Zener diode incorporating an ion implanted layer establishing the breakdown point below the surface |
JPH0397224A (ja) * | 1989-09-11 | 1991-04-23 | Toshiba Corp | 半導体装置の製造方法 |
-
1969
- 1969-11-28 DE DE19691959817 patent/DE1959817A1/de active Pending
-
1970
- 1970-11-27 FR FR7042785A patent/FR2068704A7/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1959817A1 (de) | 1971-06-03 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |