FR2064348B1 - - Google Patents

Info

Publication number
FR2064348B1
FR2064348B1 FR7037171A FR7037171A FR2064348B1 FR 2064348 B1 FR2064348 B1 FR 2064348B1 FR 7037171 A FR7037171 A FR 7037171A FR 7037171 A FR7037171 A FR 7037171A FR 2064348 B1 FR2064348 B1 FR 2064348B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7037171A
Other languages
French (fr)
Other versions
FR2064348A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of FR2064348A1 publication Critical patent/FR2064348A1/fr
Application granted granted Critical
Publication of FR2064348B1 publication Critical patent/FR2064348B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
FR7037171A 1969-10-15 1970-10-14 Expired FR2064348B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US86669269A 1969-10-15 1969-10-15

Publications (2)

Publication Number Publication Date
FR2064348A1 FR2064348A1 (en) 1971-07-23
FR2064348B1 true FR2064348B1 (en) 1976-09-03

Family

ID=25348179

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7037171A Expired FR2064348B1 (en) 1969-10-15 1970-10-14

Country Status (5)

Country Link
US (1) US3718502A (en)
DE (1) DE2050497A1 (en)
FR (1) FR2064348B1 (en)
GB (1) GB1320555A (en)
NL (1) NL7015076A (en)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL38468A (en) * 1971-02-02 1974-11-29 Hughes Aircraft Co Electrical resistance device and its production
US3841917A (en) * 1971-09-06 1974-10-15 Philips Nv Methods of manufacturing semiconductor devices
JPS5226433B2 (en) * 1971-09-18 1977-07-14
GB1420065A (en) * 1972-01-31 1976-01-07 Mullard Ltd Methods of manufacturing semiconductor bodies
US3902930A (en) * 1972-03-13 1975-09-02 Nippon Musical Instruments Mfg Method of manufacturing iron-silicon-aluminum alloy particularly suitable for magnetic head core
US3895430A (en) * 1972-03-17 1975-07-22 Gen Electric Method for reducing blooming in semiconductor array targets
JPS562407B2 (en) * 1973-01-31 1981-01-20
FR2257998B1 (en) * 1974-01-10 1976-11-26 Commissariat Energie Atomique
US3982967A (en) * 1975-03-26 1976-09-28 Ibm Corporation Method of proton-enhanced diffusion for simultaneously forming integrated circuit regions of varying depths
US4157268A (en) * 1977-06-16 1979-06-05 International Business Machines Corporation Localized oxidation enhancement for an integrated injection logic circuit
US4278475A (en) * 1979-01-04 1981-07-14 Westinghouse Electric Corp. Forming of contoured irradiated regions in materials such as semiconductor bodies by nuclear radiation
US4364969A (en) * 1979-12-13 1982-12-21 United Kingdom Atomic Energy Authority Method of coating titanium and its alloys
US4434025A (en) 1981-06-04 1984-02-28 Robillard Jean J Controlling crystallinity and thickness of monocrystalline layer by use of an elliptically polarized beam of light
US4465529A (en) * 1981-06-05 1984-08-14 Mitsubishi Denki Kabushiki Kaisha Method of producing semiconductor device
US4521441A (en) * 1983-12-19 1985-06-04 Motorola, Inc. Plasma enhanced diffusion process
US4565710A (en) * 1984-06-06 1986-01-21 The United States Of America As Represented By The Secretary Of The Navy Process for producing carbide coatings
JPH0674501B2 (en) * 1985-02-27 1994-09-21 大阪大学長 Method of injecting heteroatoms into solids by electron beam
JPS61204372A (en) * 1985-03-06 1986-09-10 Univ Osaka Method for making material amorphous by use of implantation of heterogeneous atom into solid by electron beam
DE3520699A1 (en) * 1985-06-10 1986-01-23 BBC Aktiengesellschaft Brown, Boveri & Cie., Baden, Aargau METHOD FOR SELECTIVE DIFFUSING ALUMINUM INTO A SILICON SUBSTRATE
US5453153A (en) * 1987-11-13 1995-09-26 Kopin Corporation Zone-melting recrystallization process
US6057216A (en) * 1997-12-09 2000-05-02 International Business Machines Corporation Low temperature diffusion process for dopant concentration enhancement
US6136673A (en) * 1998-02-12 2000-10-24 Lucent Technologies Inc. Process utilizing selective TED effect when forming devices with shallow junctions
US6670255B2 (en) * 2001-09-27 2003-12-30 International Business Machines Corporation Method of fabricating lateral diodes and bipolar transistors
US20060166394A1 (en) * 2003-07-07 2006-07-27 Kukulka Jerry R Solar cell structure with solar cells having reverse-bias protection using an implanted current shunt
DE102005063462B4 (en) * 2004-09-22 2017-10-12 Infineon Technologies Ag Method for producing a doped zone in a semiconductor body
ATE465510T1 (en) * 2006-01-20 2010-05-15 Infineon Technologies Austria METHOD FOR TREATING A SEMICONDUCTOR WAFER CONTAINING OXYGEN AND SEMICONDUCTOR COMPONENT
US9589802B1 (en) 2015-12-22 2017-03-07 Varian Semuconductor Equipment Associates, Inc. Damage free enhancement of dopant diffusion into a substrate
US10546971B2 (en) * 2018-01-10 2020-01-28 International Business Machines Corporation Photodetector having a tunable junction region doping profile configured to improve contact resistance performance

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3420719A (en) * 1965-05-27 1969-01-07 Ibm Method of making semiconductors by laser induced diffusion
US3351503A (en) * 1965-09-10 1967-11-07 Horizons Inc Production of p-nu junctions by diffusion
US3481776A (en) * 1966-07-18 1969-12-02 Sprague Electric Co Ion implantation to form conductive contact
US3514348A (en) * 1967-05-10 1970-05-26 Ncr Co Method for making semiconductor devices
US3562022A (en) * 1967-12-26 1971-02-09 Hughes Aircraft Co Method of doping semiconductor bodies by indirection implantation
US3523042A (en) * 1967-12-26 1970-08-04 Hughes Aircraft Co Method of making bipolar transistor devices

Also Published As

Publication number Publication date
US3718502A (en) 1973-02-27
GB1320555A (en) 1973-06-13
DE2050497A1 (en) 1971-04-22
FR2064348A1 (en) 1971-07-23
NL7015076A (en) 1971-04-19

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Legal Events

Date Code Title Description
ST Notification of lapse