FR2061271A5 - - Google Patents

Info

Publication number
FR2061271A5
FR2061271A5 FR7032950A FR7032950A FR2061271A5 FR 2061271 A5 FR2061271 A5 FR 2061271A5 FR 7032950 A FR7032950 A FR 7032950A FR 7032950 A FR7032950 A FR 7032950A FR 2061271 A5 FR2061271 A5 FR 2061271A5
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7032950A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP44087397A external-priority patent/JPS4922235B1/ja
Priority claimed from JP44101189A external-priority patent/JPS4912797B1/ja
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of FR2061271A5 publication Critical patent/FR2061271A5/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Bipolar Transistors (AREA)
FR7032950A 1969-09-11 1970-09-10 Expired FR2061271A5 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP7219569 1969-09-11
JP44087397A JPS4922235B1 (fr) 1969-10-31 1969-10-31
JP44101189A JPS4912797B1 (fr) 1969-12-16 1969-12-16

Publications (1)

Publication Number Publication Date
FR2061271A5 true FR2061271A5 (fr) 1971-06-18

Family

ID=27300889

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7032950A Expired FR2061271A5 (fr) 1969-09-11 1970-09-10

Country Status (5)

Country Link
US (1) US3668439A (fr)
DE (1) DE2044884B2 (fr)
FR (1) FR2061271A5 (fr)
GB (1) GB1270064A (fr)
NL (1) NL154875B (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3731123A (en) * 1968-11-05 1973-05-01 Sony Corp Magnetic field detecting apparatus
US3911468A (en) * 1970-05-22 1975-10-07 Kyoichiro Fujikawa Magnetic-to-electric conversion semiconductor device
US3714473A (en) * 1971-05-12 1973-01-30 Bell Telephone Labor Inc Planar semiconductor device utilizing confined charge carrier beams
US3811075A (en) * 1971-05-26 1974-05-14 Matsushita Electric Ind Co Ltd Magneto-sensitive device having pn junction
US3737741A (en) * 1971-11-22 1973-06-05 Bell Telephone Labor Inc Semiconductor devices utilizing geometrically controllable current filaments
US3836993A (en) * 1971-12-27 1974-09-17 Licentia Gmbh Magnetic field dependent field effect transistor
JPS5648983B2 (fr) * 1974-05-10 1981-11-19
US4654684A (en) * 1981-04-13 1987-03-31 International Business Machines Corp. Magnetically sensitive transistors utilizing Lorentz field potential modultion of carrier injection
US4516144A (en) * 1982-09-23 1985-05-07 Eaton Corporation Columnated and trimmed magnetically sensitive semiconductor
CH668147A5 (de) * 1985-05-22 1988-11-30 Landis & Gyr Ag Einrichtung mit einem hallelement in integrierter halbleitertechnologie.
JPH0671104B2 (ja) * 1987-08-31 1994-09-07 株式会社東芝 磁電変換素子と磁電変換装置
US4939563A (en) * 1989-08-18 1990-07-03 Ibm Corporation Double carrier deflection high sensitivity magnetic sensor
DE10125425A1 (de) * 2001-05-25 2002-12-05 Bosch Gmbh Robert Vorrichtung zur Messung einer B-Komponente eines Magnetfeldes, Magnetfeldsensor und Strommesser
EP1620742A2 (fr) * 2003-04-28 2006-02-01 Knowles Electronics, LLC Systeme et procede de detection d'un champ magnetique
CN100340863C (zh) * 2004-06-15 2007-10-03 华南师范大学 半导体外延片性能自动测试装置及其测试方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2736822A (en) * 1952-05-09 1956-02-28 Gen Electric Hall effect apparatus
US3050698A (en) * 1960-02-12 1962-08-21 Bell Telephone Labor Inc Semiconductor hall effect devices
NL273325A (fr) * 1961-04-08
US3389230A (en) * 1967-01-06 1968-06-18 Hudson Magiston Corp Semiconductive magnetic transducer

Also Published As

Publication number Publication date
DE2044884A1 (de) 1971-04-08
US3668439A (en) 1972-06-06
DE2044884B2 (de) 1973-05-30
NL7013480A (fr) 1971-03-15
NL154875B (nl) 1977-10-17
GB1270064A (en) 1972-04-12

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