FR2043689A1 - - Google Patents

Info

Publication number
FR2043689A1
FR2043689A1 FR7018929A FR7018929A FR2043689A1 FR 2043689 A1 FR2043689 A1 FR 2043689A1 FR 7018929 A FR7018929 A FR 7018929A FR 7018929 A FR7018929 A FR 7018929A FR 2043689 A1 FR2043689 A1 FR 2043689A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7018929A
Other versions
FR2043689B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Publication of FR2043689A1 publication Critical patent/FR2043689A1/fr
Application granted granted Critical
Publication of FR2043689B1 publication Critical patent/FR2043689B1/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Logic Circuits (AREA)
  • Shift Register Type Memory (AREA)
FR7018929A 1969-05-27 1970-05-25 Expired FR2043689B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US82824669A 1969-05-27 1969-05-27

Publications (2)

Publication Number Publication Date
FR2043689A1 true FR2043689A1 (fr) 1971-02-19
FR2043689B1 FR2043689B1 (fr) 1974-09-20

Family

ID=25251257

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7018929A Expired FR2043689B1 (fr) 1969-05-27 1970-05-25

Country Status (5)

Country Link
US (1) US3575609A (fr)
JP (1) JPS5023577B1 (fr)
DE (1) DE2025857A1 (fr)
FR (1) FR2043689B1 (fr)
GB (1) GB1256322A (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3789239A (en) * 1971-07-12 1974-01-29 Teletype Corp Signal boost for shift register
US3900747A (en) * 1971-12-15 1975-08-19 Sony Corp Digital circuit for amplifying a signal
JPS4878842A (fr) * 1972-01-21 1973-10-23
BE792939A (fr) * 1972-04-10 1973-04-16 Rca Corp
US3808458A (en) * 1972-11-30 1974-04-30 Gen Electric Dynamic shift register
GB1459951A (en) * 1974-07-25 1976-12-31 Integrated Photomatrix Ltd Shift registers
IT1075851B (it) * 1975-11-17 1985-04-22 Ibm Circuito perfezionato a trasferimento di carica
US5672991A (en) * 1995-04-14 1997-09-30 International Business Machines Corporation Differential delay line circuit for outputting signal with equal pulse widths
US8699296B2 (en) * 2011-10-13 2014-04-15 Oracle International Corporation Dynamic phase shifter and staticizer

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3322974A (en) * 1966-03-14 1967-05-30 Rca Corp Flip-flop adaptable for counter comprising inverters and inhibitable gates and in cooperation with overlapping clocks for temporarily maintaining complementary outputs at same digital level
US3497715A (en) * 1967-06-09 1970-02-24 Ncr Co Three-phase metal-oxide-semiconductor logic circuit

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
*REVUE AMERICAINE "IBM TECHNICAL DISCLOSURE BULLETIN", VOL.12, NO 12, MAI 1970, PAGES 2227-2228, ARTICLE : TWO PHASE DYNAMIC SHIFT REGISTER PARRISH, SPAMPINATO . FIGURES A,B, DE PAGE 2227, LIGNE 1 A PAGE 2228, LIGNE 7. *
*REVUE AMERICAINE "IEEE JOURNAL OF SOLID-STATE CIRCUITS", VOL.SC-2, NO 4, DECEMBRE 1967, PAGES 130-147 ET EN PARTICULIER PAGES 143-144, ARTICLE : "CURRENT STATUS OF L.S.I. TECNOLOGY". PAR PETRITZ . FIGURES 22A ET B, ET DE PAGE 143, COLONNE DE DROITE, LIGNE 6, A PAGE 144, COLONNE DE GAUCHE, LIGNE 9. *
*REVUE AMERICAINE : "THE ELECTRONIC ENGINEER" VOL.29, NO 3, MARS 1970 *
PAGES 59-61, ARTICLE : "MOS SHIFT REGISTERS" LANDERS . FIGURES 6 ET 11, ET PAGE 59, LE PARAGRAPHE "DYNAMIC SHIFT REGISTERS".) *
REVUE AMERICAINE "ELECTRONICS", VOL. 40, NO 17, 21 AOUT 1967, PAGES 147-148, ARTICLE : "LOW THRESHOLD VOLTAGES SWITCH MOS REGISTERS". LES FIGURES A LA PAGE 147. *

Also Published As

Publication number Publication date
US3575609A (en) 1971-04-20
JPS5023577B1 (fr) 1975-08-08
DE2025857A1 (de) 1970-12-10
GB1256322A (en) 1971-12-08
FR2043689B1 (fr) 1974-09-20

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Legal Events

Date Code Title Description
ST Notification of lapse