FR2037453A5 - - Google Patents

Info

Publication number
FR2037453A5
FR2037453A5 FR7007340A FR7007340A FR2037453A5 FR 2037453 A5 FR2037453 A5 FR 2037453A5 FR 7007340 A FR7007340 A FR 7007340A FR 7007340 A FR7007340 A FR 7007340A FR 2037453 A5 FR2037453 A5 FR 2037453A5
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7007340A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of FR2037453A5 publication Critical patent/FR2037453A5/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR7007340A 1969-03-12 1970-03-02 Expired FR2037453A5 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US80652569A 1969-03-12 1969-03-12

Publications (1)

Publication Number Publication Date
FR2037453A5 true FR2037453A5 (ja) 1970-12-31

Family

ID=25194240

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7007340A Expired FR2037453A5 (ja) 1969-03-12 1970-03-02

Country Status (5)

Country Link
JP (1) JPS508714B1 (ja)
DE (1) DE2008410A1 (ja)
FR (1) FR2037453A5 (ja)
GB (1) GB1295541A (ja)
NL (1) NL7001278A (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2700994C2 (de) * 1976-04-16 1986-02-06 International Business Machines Corp., Armonk, N.Y. Verfahren und Vorrichtung zum Ziehen von kristallinen Siliciumkörpern
DE2649201C2 (de) * 1976-10-28 1983-02-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von einkristallinen Halbleitermaterialbändern durch senkrechtes Ziehen aus einem Schmelzfilm unter Verwendung eines Formgebungsteils

Also Published As

Publication number Publication date
DE2008410A1 (de) 1970-09-24
JPS508714B1 (ja) 1975-04-07
NL7001278A (ja) 1970-09-15
GB1295541A (ja) 1972-11-08

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Legal Events

Date Code Title Description
ST Notification of lapse
AR Application made for restoration
BR Restoration of rights