FR2028537A1 - - Google Patents

Info

Publication number
FR2028537A1
FR2028537A1 FR7001569A FR7001569A FR2028537A1 FR 2028537 A1 FR2028537 A1 FR 2028537A1 FR 7001569 A FR7001569 A FR 7001569A FR 7001569 A FR7001569 A FR 7001569A FR 2028537 A1 FR2028537 A1 FR 2028537A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7001569A
Other versions
FR2028537B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2028537A1 publication Critical patent/FR2028537A1/fr
Application granted granted Critical
Publication of FR2028537B1 publication Critical patent/FR2028537B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10G—CRACKING HYDROCARBON OILS; PRODUCTION OF LIQUID HYDROCARBON MIXTURES, e.g. BY DESTRUCTIVE HYDROGENATION, OLIGOMERISATION, POLYMERISATION; RECOVERY OF HYDROCARBON OILS FROM OIL-SHALE, OIL-SAND, OR GASES; REFINING MIXTURES MAINLY CONSISTING OF HYDROCARBONS; REFORMING OF NAPHTHA; MINERAL WAXES
    • C10G21/00—Refining of hydrocarbon oils, in the absence of hydrogen, by extraction with selective solvents
    • C10G21/30—Controlling or regulating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/067—Graded energy gap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/129—Pulse doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/134—Remelt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Recrystallisation Techniques (AREA)
FR7001569A 1969-01-17 1970-01-16 Expired FR2028537B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6900787A NL6900787A (fr) 1969-01-17 1969-01-17

Publications (2)

Publication Number Publication Date
FR2028537A1 true FR2028537A1 (fr) 1970-10-09
FR2028537B1 FR2028537B1 (fr) 1975-02-21

Family

ID=19805894

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7001569A Expired FR2028537B1 (fr) 1969-01-17 1970-01-16

Country Status (6)

Country Link
US (1) US3668555A (fr)
BE (1) BE744568A (fr)
FR (1) FR2028537B1 (fr)
GB (1) GB1292213A (fr)
NL (1) NL6900787A (fr)
SE (1) SE362988B (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3818377A (en) * 1969-09-19 1974-06-18 Matsushita Electric Ind Co Ltd Oscillatory device utilizing pulse generating diode
US3978509A (en) * 1972-06-02 1976-08-31 U.S. Philips Corporation Photosensitive semiconductor device
FR2284987A1 (fr) * 1974-09-10 1976-04-09 Thomson Csf Structure semi-conductrice particuliere de diode a injection thermoionique a faible bruit
US3986192A (en) * 1975-01-02 1976-10-12 Bell Telephone Laboratories, Incorporated High efficiency gallium arsenide impatt diodes
US4201604A (en) * 1975-08-13 1980-05-06 Raytheon Company Process for making a negative resistance diode utilizing spike doping
JPS52101990A (en) * 1976-02-21 1977-08-26 Hitachi Ltd Semiconductor device for photoelectric transducer and its manufacture
DE102007007159B4 (de) * 2007-02-09 2009-09-03 Technische Universität Darmstadt Gunn-Diode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1528653A (fr) * 1966-02-10 1968-06-14 Varian Associates Dispositif semi-conducteur à mobilité différentielle globale négative et à conductance externe négative dans le domaine des micro-ondes

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3467896A (en) * 1966-03-28 1969-09-16 Varian Associates Heterojunctions and domain control in bulk negative conductivity semiconductors
US3490140A (en) * 1967-10-05 1970-01-20 Bell Telephone Labor Inc Methods for making semiconductor devices
US3480879A (en) * 1968-01-04 1969-11-25 Ibm Bulk oscillator using strained semiconductor
US3541401A (en) * 1968-07-15 1970-11-17 Ibm Space charge wave amplifiers using cathode drop techniques
USB351759I5 (fr) * 1968-09-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1528653A (fr) * 1966-02-10 1968-06-14 Varian Associates Dispositif semi-conducteur à mobilité différentielle globale négative et à conductance externe négative dans le domaine des micro-ondes

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
*REVUE AMERICAINE" "ENGINEERING " VOLUME 202 26 AOUT 1966, " HIGHER FREQUENCIES FROM THE GUNN EFFECT " PAGE 372. *
REVUE JAPONAISE" NEC RESEARCH AND DEVELOPMENT. OCTOBRE 1967, "GAAS EPITAXIAL GUNN EFFECT OSCILLATORS " H. MURAKAMI ET AL. PAGES 49 - 55. *

Also Published As

Publication number Publication date
GB1292213A (en) 1972-10-11
US3668555A (en) 1972-06-06
SE362988B (fr) 1973-12-27
DE2000676B2 (de) 1976-12-23
BE744568A (fr) 1970-07-16
NL6900787A (fr) 1970-07-21
FR2028537B1 (fr) 1975-02-21
DE2000676A1 (de) 1970-09-03

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Legal Events

Date Code Title Description
ST Notification of lapse