FR2022530A1 - - Google Patents

Info

Publication number
FR2022530A1
FR2022530A1 FR6937760A FR6937760A FR2022530A1 FR 2022530 A1 FR2022530 A1 FR 2022530A1 FR 6937760 A FR6937760 A FR 6937760A FR 6937760 A FR6937760 A FR 6937760A FR 2022530 A1 FR2022530 A1 FR 2022530A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR6937760A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of FR2022530A1 publication Critical patent/FR2022530A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
FR6937760A 1968-11-04 1969-11-03 Withdrawn FR2022530A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US77300168A 1968-11-04 1968-11-04

Publications (1)

Publication Number Publication Date
FR2022530A1 true FR2022530A1 (fr) 1970-07-31

Family

ID=25096873

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6937760A Withdrawn FR2022530A1 (fr) 1968-11-04 1969-11-03

Country Status (7)

Country Link
US (1) US3571809A (fr)
JP (1) JPS4819088B1 (fr)
BE (1) BE741170A (fr)
CH (1) CH513489A (fr)
DE (1) DE1954940A1 (fr)
FR (1) FR2022530A1 (fr)
NL (1) NL6916600A (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3699543A (en) * 1968-11-04 1972-10-17 Energy Conversion Devices Inc Combination film deposited switch unit and integrated circuits
US4233673A (en) * 1970-06-24 1980-11-11 Westinghouse Electric Corp. Electrically resettable non-volatile memory for a fuse system
US3680062A (en) * 1970-06-24 1972-07-25 Westinghouse Electric Corp Resettable non-volatile memory utilizing variable threshold voltage devices
GB1412107A (en) * 1971-12-18 1975-10-29 Marconi Co Ltd Semi-conductor memory device arrangements
US3864715A (en) * 1972-12-22 1975-02-04 Du Pont Diode array-forming electrical element
US3846767A (en) * 1973-10-24 1974-11-05 Energy Conversion Devices Inc Method and means for resetting filament-forming memory semiconductor device
US4677742A (en) * 1983-01-18 1987-07-07 Energy Conversion Devices, Inc. Electronic matrix arrays and method for making the same
US6888750B2 (en) * 2000-04-28 2005-05-03 Matrix Semiconductor, Inc. Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication
US6580124B1 (en) 2000-08-14 2003-06-17 Matrix Semiconductor Inc. Multigate semiconductor device with vertical channel current and method of fabrication
AU2001286432A1 (en) 2000-08-14 2002-02-25 Matrix Semiconductor, Inc. Dense arrays and charge storage devices, and methods for making same
US6897514B2 (en) * 2001-03-28 2005-05-24 Matrix Semiconductor, Inc. Two mask floating gate EEPROM and method of making
US6841813B2 (en) * 2001-08-13 2005-01-11 Matrix Semiconductor, Inc. TFT mask ROM and method for making same
US6593624B2 (en) 2001-09-25 2003-07-15 Matrix Semiconductor, Inc. Thin film transistors with vertically offset drain regions
US6853049B2 (en) 2002-03-13 2005-02-08 Matrix Semiconductor, Inc. Silicide-silicon oxide-semiconductor antifuse device and method of making
US6737675B2 (en) 2002-06-27 2004-05-18 Matrix Semiconductor, Inc. High density 3D rail stack arrays
US9627395B2 (en) 2015-02-11 2017-04-18 Sandisk Technologies Llc Enhanced channel mobility three-dimensional memory structure and method of making thereof
US9478495B1 (en) 2015-10-26 2016-10-25 Sandisk Technologies Llc Three dimensional memory device containing aluminum source contact via structure and method of making thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1212155B (de) * 1964-02-05 1966-03-10 Danfoss As Elektrischer Speicher
DE1287628B (fr) * 1964-08-07 1969-01-23

Also Published As

Publication number Publication date
CH513489A (de) 1971-09-30
NL6916600A (fr) 1970-05-08
US3571809A (en) 1971-03-23
DE1954940A1 (de) 1970-06-25
BE741170A (fr) 1970-04-16
JPS4819088B1 (fr) 1973-06-11

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Legal Events

Date Code Title Description
ST Notification of lapse