FR2022282B1 - - Google Patents

Info

Publication number
FR2022282B1
FR2022282B1 FR696935747A FR6935747A FR2022282B1 FR 2022282 B1 FR2022282 B1 FR 2022282B1 FR 696935747 A FR696935747 A FR 696935747A FR 6935747 A FR6935747 A FR 6935747A FR 2022282 B1 FR2022282 B1 FR 2022282B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR696935747A
Other versions
FR2022282A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of FR2022282A1 publication Critical patent/FR2022282A1/fr
Application granted granted Critical
Publication of FR2022282B1 publication Critical patent/FR2022282B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/035—Diffusion through a layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/144—Shallow diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
FR696935747A 1968-10-17 1969-10-17 Expired FR2022282B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP43075978A JPS4822374B1 (fr) 1968-10-17 1968-10-17

Publications (2)

Publication Number Publication Date
FR2022282A1 FR2022282A1 (fr) 1970-07-31
FR2022282B1 true FR2022282B1 (fr) 1973-05-25

Family

ID=13591832

Family Applications (1)

Application Number Title Priority Date Filing Date
FR696935747A Expired FR2022282B1 (fr) 1968-10-17 1969-10-17

Country Status (5)

Country Link
US (1) US3663874A (fr)
JP (1) JPS4822374B1 (fr)
DE (1) DE1950873B2 (fr)
FR (1) FR2022282B1 (fr)
GB (1) GB1236157A (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3909119A (en) * 1974-02-06 1975-09-30 Westinghouse Electric Corp Guarded planar PN junction semiconductor device
US3945029A (en) * 1974-03-19 1976-03-16 Sergei Fedorovich Kausov Semiconductor diode with layers of different but related resistivities
US3990099A (en) * 1974-12-05 1976-11-02 Rca Corporation Planar Trapatt diode
US4064620A (en) * 1976-01-27 1977-12-27 Hughes Aircraft Company Ion implantation process for fabricating high frequency avalanche devices
JPS5343688U (fr) * 1976-09-17 1978-04-14
US4153904A (en) * 1977-10-03 1979-05-08 Texas Instruments Incorporated Semiconductor device having a high breakdown voltage junction characteristic
US4441114A (en) * 1981-12-22 1984-04-03 International Business Machines Corporation CMOS Subsurface breakdown zener diode
US4833509A (en) * 1983-10-31 1989-05-23 Burr-Brown Corporation Integrated circuit reference diode and fabrication method therefor
SE9900882D0 (sv) * 1999-03-12 1999-03-12 Ind Mikroelektronikcentrum Ab A high power IMPATT diode
US10355144B1 (en) * 2018-07-23 2019-07-16 Amazing Microelectronic Corp. Heat-dissipating Zener diode

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3309241A (en) * 1961-03-21 1967-03-14 Jr Donald C Dickson P-n junction having bulk breakdown only and method of producing same
US3345221A (en) * 1963-04-10 1967-10-03 Motorola Inc Method of making a semiconductor device having improved pn junction avalanche characteristics
USB433088I5 (fr) * 1965-02-16
US3417299A (en) * 1965-07-20 1968-12-17 Raytheon Co Controlled breakdown voltage diode
FR1519634A (fr) * 1965-12-30 1968-04-05 Siemens Ag Diode à avalanche pour la production d'oscillations
US3403306A (en) * 1966-01-20 1968-09-24 Itt Semiconductor device having controllable noise characteristics
US3465159A (en) * 1966-06-27 1969-09-02 Us Army Light amplifying device
DE1300164B (de) * 1967-01-26 1969-07-31 Itt Ind Gmbh Deutsche Verfahren zum Herstellen von Zenerdioden

Also Published As

Publication number Publication date
DE1950873B2 (de) 1971-09-02
FR2022282A1 (fr) 1970-07-31
JPS4822374B1 (fr) 1973-07-05
US3663874A (en) 1972-05-16
DE1950873A1 (de) 1970-04-30
GB1236157A (en) 1971-06-23

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