FR2016214A1 - - Google Patents

Info

Publication number
FR2016214A1
FR2016214A1 FR6928912A FR6928912A FR2016214A1 FR 2016214 A1 FR2016214 A1 FR 2016214A1 FR 6928912 A FR6928912 A FR 6928912A FR 6928912 A FR6928912 A FR 6928912A FR 2016214 A1 FR2016214 A1 FR 2016214A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR6928912A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of FR2016214A1 publication Critical patent/FR2016214A1/fr
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/048—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using other optical storage elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G17/00—Electrographic processes using patterns other than charge patterns, e.g. an electric conductivity pattern; Processes involving a migration, e.g. photoelectrophoresis, photoelectrosolography; Processes involving a selective transfer, e.g. electrophoto-adhesive processes; Apparatus essentially involving a single such process
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K1/00—Methods or arrangements for marking the record carrier in digital fashion
    • G06K1/12—Methods or arrangements for marking the record carrier in digital fashion otherwise than by punching
    • G06K1/128—Methods or arrangements for marking the record carrier in digital fashion otherwise than by punching by electric registration, e.g. electrolytic, spark erosion
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/257—Multistable switching devices, e.g. memristors based on radiation or particle beam assisted switching, e.g. optically controlled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
FR6928912A 1968-08-22 1969-08-28 Pending FR2016214A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US75460768A 1968-08-22 1968-08-22
US79144169A 1969-01-15 1969-01-15

Publications (1)

Publication Number Publication Date
FR2016214A1 true FR2016214A1 (en) 1970-05-08

Family

ID=27115945

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6928912A Pending FR2016214A1 (en) 1968-08-22 1969-08-28

Country Status (10)

Country Link
BE (1) BE737799A (en)
CA (1) CA926007A (en)
CH (1) CH529414A (en)
CS (1) CS154284B2 (en)
DE (2) DE1966822A1 (en)
ES (1) ES370716A1 (en)
FR (1) FR2016214A1 (en)
GB (1) GB1283542A (en)
IL (1) IL32745A (en)
NL (1) NL6912600A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2314539A1 (en) * 1975-06-10 1977-01-07 Gao Ges Automation Org Identification card with security markings - has irreversibly altered conductivity pattern in chemical layer between conductive and insulating layer

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3665425A (en) * 1970-03-09 1972-05-23 Energy Conversion Devices Inc Information storage systems utilizing amorphous thin films
US3678852A (en) * 1970-04-10 1972-07-25 Energy Conversion Devices Inc Printing and copying employing materials with surface variations
US3819377A (en) * 1971-08-12 1974-06-25 Energy Conversion Devices Inc Method of imaging and imaging material
NL7211808A (en) * 1971-09-07 1973-03-09
GB2157876B (en) * 1984-04-09 1988-09-21 Victor Company Of Japan Capacitance recording disc

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2985757A (en) * 1956-10-05 1961-05-23 Columbia Broadcasting Syst Inc Photosensitive capacitor device and method of producing the same
US3119099A (en) * 1960-02-08 1964-01-21 Wells Gardner Electronics Molecular storage unit
US3152012A (en) * 1960-12-19 1964-10-06 Ibm Apparatus for the development of electrostatic images
DE1178516B (en) * 1961-08-02 1964-09-24 Siemens Ag Method for controlling the intensity of an ultrared light beam and arrangement for carrying it out
DE1236075B (en) * 1961-08-23 1967-03-09 Siemens Ag Device and method for modulating, in particular, infrared light
BE624465A (en) * 1961-11-06
US3341825A (en) * 1962-12-26 1967-09-12 Buuker Ramo Corp Quantum mechanical information storage system
DE1250737B (en) * 1963-07-08
US3271591A (en) * 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
US3187310A (en) * 1963-10-17 1965-06-01 Boeing Co Solid state data storage and switching devices
DE1464880B2 (en) * 1964-05-05 1970-11-12 Danfoss A/S, Nordborg (Dänemark) Electronic switching arrangement using semiconductor switching elements without a barrier layer
US3392376A (en) * 1964-09-18 1968-07-09 Ericsson Telefon Ab L M Resistance type binary storage matrix
FR1418353A (en) * 1964-11-03 1965-11-19 Minnesota Mining & Mfg radiation sensitive element
US3466616A (en) * 1965-10-22 1969-09-09 Ibm Memory device and method using dichroic defects
GB1088117A (en) * 1965-11-10 1967-10-25 Standard Telephones Cables Ltd Recording on a moving medium

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2314539A1 (en) * 1975-06-10 1977-01-07 Gao Ges Automation Org Identification card with security markings - has irreversibly altered conductivity pattern in chemical layer between conductive and insulating layer

Also Published As

Publication number Publication date
CS154284B2 (en) 1974-03-29
DE1966822A1 (en) 1974-12-19
GB1283542A (en) 1972-07-26
DE1942193C3 (en) 1984-09-13
IL32745A (en) 1973-06-29
BE737799A (en) 1970-02-02
DE1942193A1 (en) 1970-07-30
CA926007A (en) 1973-05-08
CH529414A (en) 1972-10-15
DE1942193B2 (en) 1975-06-19
ES370716A1 (en) 1971-07-01
NL6912600A (en) 1970-02-24
IL32745A0 (en) 1969-09-25

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