FR2015696B1 - - Google Patents
Info
- Publication number
- FR2015696B1 FR2015696B1 FR696923619A FR6923619A FR2015696B1 FR 2015696 B1 FR2015696 B1 FR 2015696B1 FR 696923619 A FR696923619 A FR 696923619A FR 6923619 A FR6923619 A FR 6923619A FR 2015696 B1 FR2015696 B1 FR 2015696B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
- H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H10P14/6923—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US75289768A | 1968-08-15 | 1968-08-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2015696A1 FR2015696A1 (https=) | 1970-04-30 |
| FR2015696B1 true FR2015696B1 (https=) | 1974-07-05 |
Family
ID=25028344
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR696923619A Expired FR2015696B1 (https=) | 1968-08-15 | 1969-07-08 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3560810A (https=) |
| JP (1) | JPS5520386B1 (https=) |
| DE (1) | DE1941279B2 (https=) |
| FR (1) | FR2015696B1 (https=) |
| GB (1) | GB1234119A (https=) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4015281A (en) * | 1970-03-30 | 1977-03-29 | Hitachi, Ltd. | MIS-FETs isolated on common substrate |
| US4028150A (en) * | 1973-05-03 | 1977-06-07 | Ibm Corporation | Method for making reliable MOSFET device |
| US4027321A (en) * | 1973-05-03 | 1977-05-31 | Ibm Corporation | Reliable MOSFET device and method for making same |
| US4198444A (en) * | 1975-08-04 | 1980-04-15 | General Electric Company | Method for providing substantially hermetic sealing means for electronic components |
| US4251571A (en) * | 1978-05-02 | 1981-02-17 | International Business Machines Corporation | Method for forming semiconductor structure with improved isolation between two layers of polycrystalline silicon |
| US4498095A (en) * | 1978-05-02 | 1985-02-05 | International Business Machines Corporation | Semiconductor structure with improved isolation between two layers of polycrystalline silicon |
| US4412242A (en) * | 1980-11-17 | 1983-10-25 | International Rectifier Corporation | Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions |
| US4446194A (en) * | 1982-06-21 | 1984-05-01 | Motorola, Inc. | Dual layer passivation |
| US5262336A (en) * | 1986-03-21 | 1993-11-16 | Advanced Power Technology, Inc. | IGBT process to produce platinum lifetime control |
| US5434442A (en) * | 1990-07-02 | 1995-07-18 | Motorola, Inc. | Field plate avalanche diode |
| US5726087A (en) * | 1992-04-30 | 1998-03-10 | Motorola, Inc. | Method of formation of semiconductor gate dielectric |
| US5712208A (en) * | 1994-06-09 | 1998-01-27 | Motorola, Inc. | Methods of formation of semiconductor composite gate dielectric having multiple incorporated atomic dopants |
| US6440382B1 (en) * | 1999-08-31 | 2002-08-27 | Micron Technology, Inc. | Method for producing water for use in manufacturing semiconductors |
| US6784150B2 (en) * | 2002-04-16 | 2004-08-31 | Honeywell International Inc. | Composition of pentafluoropropane, pentafluoropropane and water |
| US6838741B2 (en) * | 2002-12-10 | 2005-01-04 | General Electtric Company | Avalanche photodiode for use in harsh environments |
| JP2005019493A (ja) * | 2003-06-24 | 2005-01-20 | Renesas Technology Corp | 半導体装置 |
| JP6540228B2 (ja) * | 2015-05-25 | 2019-07-10 | 富士通株式会社 | 半導体装置及びその製造方法 |
| EP3217423A1 (en) * | 2016-03-07 | 2017-09-13 | Fritz Haber Institut der Max Planck Gesellschaft Department of Inorganic Chemistry | Transferable silica bilayer film |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USB381501I5 (https=) * | 1964-07-09 | |||
| FR1449089A (fr) * | 1964-07-09 | 1966-08-12 | Rca Corp | Dispositifs semi-conducteurs |
| US3476619A (en) * | 1966-09-13 | 1969-11-04 | Motorola Inc | Semiconductor device stabilization |
-
1968
- 1968-08-15 US US752897A patent/US3560810A/en not_active Expired - Lifetime
-
1969
- 1969-07-08 FR FR696923619A patent/FR2015696B1/fr not_active Expired
- 1969-07-30 GB GB1234119D patent/GB1234119A/en not_active Expired
- 1969-08-06 JP JP6174769A patent/JPS5520386B1/ja active Pending
- 1969-08-13 DE DE19691941279 patent/DE1941279B2/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| US3560810A (en) | 1971-02-02 |
| FR2015696A1 (https=) | 1970-04-30 |
| DE1941279A1 (de) | 1970-02-19 |
| DE1941279B2 (de) | 1972-01-05 |
| JPS5520386B1 (https=) | 1980-06-02 |
| GB1234119A (https=) | 1971-06-03 |