FR2007255A7 - - Google Patents
Info
- Publication number
- FR2007255A7 FR2007255A7 FR6913719A FR6913719A FR2007255A7 FR 2007255 A7 FR2007255 A7 FR 2007255A7 FR 6913719 A FR6913719 A FR 6913719A FR 6913719 A FR6913719 A FR 6913719A FR 2007255 A7 FR2007255 A7 FR 2007255A7
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60S—SERVICING, CLEANING, REPAIRING, SUPPORTING, LIFTING, OR MANOEUVRING OF VEHICLES, NOT OTHERWISE PROVIDED FOR
- B60S1/00—Cleaning of vehicles
- B60S1/02—Cleaning windscreens, windows or optical devices
- B60S1/46—Cleaning windscreens, windows or optical devices using liquid; Windscreen washers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/906—Dram with capacitor electrodes used for accessing, e.g. bit line is capacitor plate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/91—Controlling charging state at semiconductor-insulator interface
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/953—Making radiation resistant device
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US72491468A | 1968-04-29 | 1968-04-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2007255A7 true FR2007255A7 (fr) | 1970-01-02 |
Family
ID=24912421
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR6913719A Expired FR2007255A7 (fr) | 1968-04-29 | 1969-04-29 |
Country Status (5)
Country | Link |
---|---|
US (1) | US3547717A (fr) |
JP (1) | JPS4810907B1 (fr) |
DE (1) | DE1921373A1 (fr) |
FR (1) | FR2007255A7 (fr) |
GB (1) | GB1261365A (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3999209A (en) * | 1970-09-14 | 1976-12-21 | Rockwell International Corporation | Process for radiation hardening of MOS devices and device produced thereby |
US3882530A (en) * | 1971-12-09 | 1975-05-06 | Us Government | Radiation hardening of mos devices by boron |
US3787251A (en) * | 1972-04-24 | 1974-01-22 | Signetics Corp | Mos semiconductor structure with increased field threshold and method for making the same |
US3798082A (en) * | 1972-08-07 | 1974-03-19 | Bell Telephone Labor Inc | Technique for the fabrication of a pn junction device |
JPS5431928Y2 (fr) * | 1974-10-17 | 1979-10-05 | ||
US3925107A (en) * | 1974-11-11 | 1975-12-09 | Ibm | Method of stabilizing mos devices |
NL7902247A (nl) * | 1978-03-25 | 1979-09-27 | Fujitsu Ltd | Metaal-isolator-halfgeleidertype halfgeleiderinrich- ting en werkwijze voor het vervaardigen ervan. |
JPH0614524B2 (ja) * | 1984-03-01 | 1994-02-23 | 株式会社東芝 | 半導体装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE674294A (fr) * | 1964-12-28 | |||
US3402081A (en) * | 1965-06-30 | 1968-09-17 | Ibm | Method for controlling the electrical characteristics of a semiconductor surface and product produced thereby |
US3445924A (en) * | 1965-06-30 | 1969-05-27 | Ibm | Method for fabricating insulated-gate field effect transistors having controlled operating characteristics |
-
1968
- 1968-04-29 US US724914A patent/US3547717A/en not_active Expired - Lifetime
-
1969
- 1969-04-21 GB GB20168/69A patent/GB1261365A/en not_active Expired
- 1969-04-26 DE DE19691921373 patent/DE1921373A1/de active Pending
- 1969-04-26 JP JP44032255A patent/JPS4810907B1/ja active Pending
- 1969-04-29 FR FR6913719A patent/FR2007255A7/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1261365A (en) | 1972-01-26 |
US3547717A (en) | 1970-12-15 |
JPS4810907B1 (fr) | 1973-04-09 |
DE1921373A1 (de) | 1969-11-20 |