FR2007255A7 - - Google Patents

Info

Publication number
FR2007255A7
FR2007255A7 FR6913719A FR6913719A FR2007255A7 FR 2007255 A7 FR2007255 A7 FR 2007255A7 FR 6913719 A FR6913719 A FR 6913719A FR 6913719 A FR6913719 A FR 6913719A FR 2007255 A7 FR2007255 A7 FR 2007255A7
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR6913719A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sprague Electric Co
Original Assignee
Sprague Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sprague Electric Co filed Critical Sprague Electric Co
Application granted granted Critical
Publication of FR2007255A7 publication Critical patent/FR2007255A7/fr
Expired legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B60VEHICLES IN GENERAL
    • B60SSERVICING, CLEANING, REPAIRING, SUPPORTING, LIFTING, OR MANOEUVRING OF VEHICLES, NOT OTHERWISE PROVIDED FOR
    • B60S1/00Cleaning of vehicles
    • B60S1/02Cleaning windscreens, windows or optical devices
    • B60S1/46Cleaning windscreens, windows or optical devices using liquid; Windscreen washers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/906Dram with capacitor electrodes used for accessing, e.g. bit line is capacitor plate
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/91Controlling charging state at semiconductor-insulator interface
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/953Making radiation resistant device

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Junction Field-Effect Transistors (AREA)
FR6913719A 1968-04-29 1969-04-29 Expired FR2007255A7 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US72491468A 1968-04-29 1968-04-29

Publications (1)

Publication Number Publication Date
FR2007255A7 true FR2007255A7 (fr) 1970-01-02

Family

ID=24912421

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6913719A Expired FR2007255A7 (fr) 1968-04-29 1969-04-29

Country Status (5)

Country Link
US (1) US3547717A (fr)
JP (1) JPS4810907B1 (fr)
DE (1) DE1921373A1 (fr)
FR (1) FR2007255A7 (fr)
GB (1) GB1261365A (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3999209A (en) * 1970-09-14 1976-12-21 Rockwell International Corporation Process for radiation hardening of MOS devices and device produced thereby
US3882530A (en) * 1971-12-09 1975-05-06 Us Government Radiation hardening of mos devices by boron
US3787251A (en) * 1972-04-24 1974-01-22 Signetics Corp Mos semiconductor structure with increased field threshold and method for making the same
US3798082A (en) * 1972-08-07 1974-03-19 Bell Telephone Labor Inc Technique for the fabrication of a pn junction device
JPS5431928Y2 (fr) * 1974-10-17 1979-10-05
US3925107A (en) * 1974-11-11 1975-12-09 Ibm Method of stabilizing mos devices
NL7902247A (nl) * 1978-03-25 1979-09-27 Fujitsu Ltd Metaal-isolator-halfgeleidertype halfgeleiderinrich- ting en werkwijze voor het vervaardigen ervan.
JPH0614524B2 (ja) * 1984-03-01 1994-02-23 株式会社東芝 半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE674294A (fr) * 1964-12-28
US3402081A (en) * 1965-06-30 1968-09-17 Ibm Method for controlling the electrical characteristics of a semiconductor surface and product produced thereby
US3445924A (en) * 1965-06-30 1969-05-27 Ibm Method for fabricating insulated-gate field effect transistors having controlled operating characteristics

Also Published As

Publication number Publication date
GB1261365A (en) 1972-01-26
US3547717A (en) 1970-12-15
JPS4810907B1 (fr) 1973-04-09
DE1921373A1 (de) 1969-11-20

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