FR1560797A - - Google Patents

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Publication number
FR1560797A
FR1560797A FR1560797DA FR1560797A FR 1560797 A FR1560797 A FR 1560797A FR 1560797D A FR1560797D A FR 1560797DA FR 1560797 A FR1560797 A FR 1560797A
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France
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F6/00—Superconducting magnets; Superconducting coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
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    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/825—Apparatus per se, device per se, or process of making or operating same
    • Y10S505/873—Active solid-state device
    • Y10S505/875—Combined with housing and cryogenic fluid cooling
FR1560797D 1967-03-30 1968-03-29 Expired FR1560797A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US62717667A 1967-03-30 1967-03-30

Publications (1)

Publication Number Publication Date
FR1560797A true FR1560797A (fr) 1969-03-21

Family

ID=24513535

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1560797D Expired FR1560797A (fr) 1967-03-30 1968-03-29

Country Status (4)

Country Link
US (1) US3519894A (fr)
DE (1) DE1764049A1 (fr)
FR (1) FR1560797A (fr)
GB (1) GB1212765A (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3795803A (en) * 1972-09-21 1974-03-05 Boeing Co Radiant energy optical detector amplifier
GB2457231B (en) * 2008-02-05 2010-01-06 Siemens Magnet Technology Ltd Switch recloser comprising a persistent switch system
GB0822901D0 (en) * 2008-12-16 2009-01-21 Magnifye Ltd Superconducting systems
WO2021086871A1 (fr) * 2019-10-28 2021-05-06 Psiquantum, Corp. Composants électroniques utilisant une ionisation de champ

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3011133A (en) * 1958-06-04 1961-11-28 Ibm Oscillator utilizing avalanche breakdown of supercooled semiconductor
US3029353A (en) * 1959-07-07 1962-04-10 Rca Corp Variable pulse delay using semiconductor impact ionization effect
US3010057A (en) * 1960-09-06 1961-11-21 Westinghouse Electric Corp Semiconductor device
US3121808A (en) * 1961-09-14 1964-02-18 Bell Telephone Labor Inc Low temperature negative resistance device
BE635129A (fr) * 1962-07-19
US3369207A (en) * 1963-03-27 1968-02-13 Hasegawa Electronics Co Ltd Temperature varied semiconductor device
US3412344A (en) * 1963-10-30 1968-11-19 Rca Corp Semiconductor plasma laser

Also Published As

Publication number Publication date
US3519894A (en) 1970-07-07
DE1764049A1 (de) 1971-05-13
GB1212765A (en) 1970-11-18

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