FR1550850A - - Google Patents

Info

Publication number
FR1550850A
FR1550850A FR1550850DA FR1550850A FR 1550850 A FR1550850 A FR 1550850A FR 1550850D A FR1550850D A FR 1550850DA FR 1550850 A FR1550850 A FR 1550850A
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1550850A publication Critical patent/FR1550850A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/174—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being Group III-V material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
FR1550850D 1967-01-13 1968-01-12 Expired FR1550850A (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1852/67A GB1101909A (en) 1967-01-13 1967-01-13 Method for producing gallium arsenide devices

Publications (1)

Publication Number Publication Date
FR1550850A true FR1550850A (enExample) 1968-12-20

Family

ID=9729139

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1550850D Expired FR1550850A (enExample) 1967-01-13 1968-01-12

Country Status (5)

Country Link
US (1) US3530015A (enExample)
DE (1) DE1283398B (enExample)
FR (1) FR1550850A (enExample)
GB (1) GB1101909A (enExample)
NL (1) NL6800480A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2106379A1 (enExample) * 1970-09-08 1972-05-05 Philips Nv

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3768151A (en) * 1970-11-03 1973-10-30 Ibm Method of forming ohmic contacts to semiconductors
NL8403017A (nl) * 1984-10-04 1986-05-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij op een halfgeleiderlichaam een met mg gedoteerde epitaxiale laag wordt afgezet.
GB8428888D0 (en) * 1984-11-15 1984-12-27 Standard Telephones Cables Ltd Semiconductor processing
US4830983A (en) * 1987-11-05 1989-05-16 Xerox Corporation Method of enhanced introduction of impurity species into a semiconductor structure from a deposited source and application thereof
US5188978A (en) * 1990-03-02 1993-02-23 International Business Machines Corporation Controlled silicon doping of III-V compounds by thermal oxidation of silicon capping layer

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE966906C (de) * 1953-04-09 1957-09-19 Siemens Ag Verfahren zur sperrfreien Kontaktierung von Flaechengleichrichtern oder -transistoren mit einem eine p-n-Schichtung aufweisenden Halbleitereinkristall
NL275313A (enExample) * 1961-05-10
FR1347297A (fr) * 1961-12-18 1963-12-27 Ibm Dispositif semiconducteur et méthode de fabrication
US3406049A (en) * 1965-04-28 1968-10-15 Ibm Epitaxial semiconductor layer as a diffusion mask

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2106379A1 (enExample) * 1970-09-08 1972-05-05 Philips Nv

Also Published As

Publication number Publication date
GB1101909A (en) 1968-02-07
DE1283398B (de) 1968-11-21
US3530015A (en) 1970-09-22
NL6800480A (enExample) 1968-07-15

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Legal Events

Date Code Title Description
ST Notification of lapse