FR1545326A - Insulated gate field effect transistor - Google Patents

Insulated gate field effect transistor

Info

Publication number
FR1545326A
FR1545326A FR129663A FR129663A FR1545326A FR 1545326 A FR1545326 A FR 1545326A FR 129663 A FR129663 A FR 129663A FR 129663 A FR129663 A FR 129663A FR 1545326 A FR1545326 A FR 1545326A
Authority
FR
France
Prior art keywords
field effect
effect transistor
insulated gate
gate field
insulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR129663A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDY Industries LLC
Teledyne Inc
Original Assignee
Teledyne Inc
Teledyne Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teledyne Inc, Teledyne Industries Inc filed Critical Teledyne Inc
Priority to FR129663A priority Critical patent/FR1545326A/en
Application granted granted Critical
Publication of FR1545326A publication Critical patent/FR1545326A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
FR129663A 1966-11-25 1967-11-24 Insulated gate field effect transistor Expired FR1545326A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR129663A FR1545326A (en) 1966-11-25 1967-11-24 Insulated gate field effect transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US59693166A 1966-11-25 1966-11-25
FR129663A FR1545326A (en) 1966-11-25 1967-11-24 Insulated gate field effect transistor

Publications (1)

Publication Number Publication Date
FR1545326A true FR1545326A (en) 1968-11-08

Family

ID=26181120

Family Applications (1)

Application Number Title Priority Date Filing Date
FR129663A Expired FR1545326A (en) 1966-11-25 1967-11-24 Insulated gate field effect transistor

Country Status (1)

Country Link
FR (1) FR1545326A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2079373A1 (en) * 1970-02-12 1971-11-12 Ibm

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2079373A1 (en) * 1970-02-12 1971-11-12 Ibm

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