FR1539935A - Manufacturing process for tunnel diodes and gallium antimonide - Google Patents
Manufacturing process for tunnel diodes and gallium antimonideInfo
- Publication number
- FR1539935A FR1539935A FR117583A FR117583A FR1539935A FR 1539935 A FR1539935 A FR 1539935A FR 117583 A FR117583 A FR 117583A FR 117583 A FR117583 A FR 117583A FR 1539935 A FR1539935 A FR 1539935A
- Authority
- FR
- France
- Prior art keywords
- manufacturing process
- gallium antimonide
- tunnel diodes
- tunnel
- diodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR117583A FR1539935A (en) | 1967-08-10 | 1967-08-10 | Manufacturing process for tunnel diodes and gallium antimonide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR117583A FR1539935A (en) | 1967-08-10 | 1967-08-10 | Manufacturing process for tunnel diodes and gallium antimonide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1539935A true FR1539935A (en) | 1968-09-20 |
Family
ID=8636733
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR117583A Expired FR1539935A (en) | 1967-08-10 | 1967-08-10 | Manufacturing process for tunnel diodes and gallium antimonide |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR1539935A (en) |
-
1967
- 1967-08-10 FR FR117583A patent/FR1539935A/en not_active Expired
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