FR1531730A - Process for preparing monocrystalline silicon rods - Google Patents

Process for preparing monocrystalline silicon rods

Info

Publication number
FR1531730A
FR1531730A FR109965A FR109965A FR1531730A FR 1531730 A FR1531730 A FR 1531730A FR 109965 A FR109965 A FR 109965A FR 109965 A FR109965 A FR 109965A FR 1531730 A FR1531730 A FR 1531730A
Authority
FR
France
Prior art keywords
monocrystalline silicon
silicon rods
preparing monocrystalline
preparing
rods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR109965A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to FR109965A priority Critical patent/FR1531730A/en
Application granted granted Critical
Publication of FR1531730A publication Critical patent/FR1531730A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
FR109965A 1966-06-13 1967-06-12 Process for preparing monocrystalline silicon rods Expired FR1531730A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR109965A FR1531730A (en) 1966-06-13 1967-06-12 Process for preparing monocrystalline silicon rods

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES0104258 1966-06-13
FR109965A FR1531730A (en) 1966-06-13 1967-06-12 Process for preparing monocrystalline silicon rods

Publications (1)

Publication Number Publication Date
FR1531730A true FR1531730A (en) 1968-07-05

Family

ID=25998492

Family Applications (1)

Application Number Title Priority Date Filing Date
FR109965A Expired FR1531730A (en) 1966-06-13 1967-06-12 Process for preparing monocrystalline silicon rods

Country Status (1)

Country Link
FR (1) FR1531730A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2387079A1 (en) * 1977-04-13 1978-11-10 Western Electric Co REAL-TIME ANALYSIS AND CONTROL OF FUSION CHEMISTRY IN CRYSTAL GROWTH OPERATIONS
FR2633313A1 (en) * 1988-06-02 1989-12-29 Westinghouse Electric Corp METHOD FOR DOPING A MOLTEN MASS FOR THE GROWTH OF CRYSTALS, IN PARTICULAR SILICON, IN DENDRITIC RIBBONS AND CRYSTALS OBTAINED USING THE SAME
EP0428415A1 (en) * 1989-11-16 1991-05-22 Shin-Etsu Handotai Company Limited A method for controlling specific resistance of single crystal
EP0432914A1 (en) * 1989-11-16 1991-06-19 Shin-Etsu Handotai Company Limited A method of controlling oxygen concentration in single crystal
EP0669413A1 (en) * 1993-12-28 1995-08-30 Research Development Corporation Of Japan Preparation of silicon melt for use in pull method of manufacturing single crystal

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2387079A1 (en) * 1977-04-13 1978-11-10 Western Electric Co REAL-TIME ANALYSIS AND CONTROL OF FUSION CHEMISTRY IN CRYSTAL GROWTH OPERATIONS
FR2633313A1 (en) * 1988-06-02 1989-12-29 Westinghouse Electric Corp METHOD FOR DOPING A MOLTEN MASS FOR THE GROWTH OF CRYSTALS, IN PARTICULAR SILICON, IN DENDRITIC RIBBONS AND CRYSTALS OBTAINED USING THE SAME
EP0428415A1 (en) * 1989-11-16 1991-05-22 Shin-Etsu Handotai Company Limited A method for controlling specific resistance of single crystal
EP0432914A1 (en) * 1989-11-16 1991-06-19 Shin-Etsu Handotai Company Limited A method of controlling oxygen concentration in single crystal
EP0669413A1 (en) * 1993-12-28 1995-08-30 Research Development Corporation Of Japan Preparation of silicon melt for use in pull method of manufacturing single crystal

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