FR1522805A - Semiconductor radiation detector - Google Patents
Semiconductor radiation detectorInfo
- Publication number
- FR1522805A FR1522805A FR106202A FR106202A FR1522805A FR 1522805 A FR1522805 A FR 1522805A FR 106202 A FR106202 A FR 106202A FR 106202 A FR106202 A FR 106202A FR 1522805 A FR1522805 A FR 1522805A
- Authority
- FR
- France
- Prior art keywords
- radiation detector
- semiconductor radiation
- semiconductor
- detector
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005855 radiation Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/117—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the bulk effect radiation detector type, e.g. Ge-Li compensated PIN gamma-ray detectors
- H01L31/1175—Li compensated PIN gamma-ray detectors
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US54953966A | 1966-05-12 | 1966-05-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1522805A true FR1522805A (en) | 1968-04-26 |
Family
ID=26176400
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR106202A Expired FR1522805A (en) | 1966-05-12 | 1967-05-12 | Semiconductor radiation detector |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR1522805A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2118846A1 (en) * | 1970-12-22 | 1972-08-04 | Radiotechnique Compelec | Semiconductor detector for radiation - having separated semiconducting zones of opposite type on base material |
WO2002103796A3 (en) * | 2001-06-15 | 2004-01-08 | Forschungszentrum Juelich Gmbh | Dual-sided microstructured, position-sensitive detector |
-
1967
- 1967-05-12 FR FR106202A patent/FR1522805A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2118846A1 (en) * | 1970-12-22 | 1972-08-04 | Radiotechnique Compelec | Semiconductor detector for radiation - having separated semiconducting zones of opposite type on base material |
WO2002103796A3 (en) * | 2001-06-15 | 2004-01-08 | Forschungszentrum Juelich Gmbh | Dual-sided microstructured, position-sensitive detector |
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