FR1521132A - Dispositif utilisant des instabilités de conductance négative dans les semiconducteurs - Google Patents

Dispositif utilisant des instabilités de conductance négative dans les semiconducteurs

Info

Publication number
FR1521132A
FR1521132A FR104502A FR104502A FR1521132A FR 1521132 A FR1521132 A FR 1521132A FR 104502 A FR104502 A FR 104502A FR 104502 A FR104502 A FR 104502A FR 1521132 A FR1521132 A FR 1521132A
Authority
FR
France
Prior art keywords
instabilities
semiconductors
negative conductance
conductance
negative
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR104502A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of FR1521132A publication Critical patent/FR1521132A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • H10N80/10—Gunn-effect devices
    • H10N80/103—Gunn-effect devices controlled by electromagnetic radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
  • Radiation Pyrometers (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Semiconductor Lasers (AREA)
FR104502A 1966-04-27 1967-04-27 Dispositif utilisant des instabilités de conductance négative dans les semiconducteurs Expired FR1521132A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US54575666A 1966-04-27 1966-04-27

Publications (1)

Publication Number Publication Date
FR1521132A true FR1521132A (fr) 1968-04-12

Family

ID=24177431

Family Applications (1)

Application Number Title Priority Date Filing Date
FR104502A Expired FR1521132A (fr) 1966-04-27 1967-04-27 Dispositif utilisant des instabilités de conductance négative dans les semiconducteurs

Country Status (6)

Country Link
US (1) US3440425A (esLanguage)
JP (1) JPS462706B1 (esLanguage)
BE (1) BE697573A (esLanguage)
FR (1) FR1521132A (esLanguage)
GB (1) GB1188986A (esLanguage)
NL (1) NL6704959A (esLanguage)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2719417A1 (fr) * 1994-04-28 1995-11-03 Le Person Henri Composant à hétérostructure semi-conductrice, commande par la lumière pour la génération d'oscillations hyperfréquences.

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3953810A (en) * 1966-02-25 1976-04-27 U.S. Philips Corporation Device for modulating a beam of radiation
US3800246A (en) * 1966-11-10 1974-03-26 Telefunken Patent Control of gunn oscillations by light irradiation
US3555282A (en) * 1967-07-31 1971-01-12 Nippon Electric Co Radiation sensitive switching system employing a semiconductor element
US3550031A (en) * 1967-08-21 1970-12-22 Bell Telephone Labor Inc Amplitude and phase-locking of laser transitions by plasma oscillations
US3577018A (en) * 1968-03-15 1971-05-04 Nippon Electric Co High-speed logic device employing a gunn-effect element and a semiconductor laser element
JPS4813994B1 (esLanguage) * 1968-03-15 1973-05-02
US3538451A (en) * 1968-05-02 1970-11-03 North American Rockwell Light controlled variable frequency gunn effect oscillator
US3573469A (en) * 1968-11-15 1971-04-06 Bell Telephone Labor Inc Optically controlled phase adjustment for electrical signals
US3579143A (en) * 1968-11-29 1971-05-18 North American Rockwell Method for increasing the efficiency of lsa oscillator devices by uniform illumination
US3573465A (en) * 1968-12-02 1971-04-06 Bell Telephone Labor Inc Gunn effect driver for optical modulators
US3651426A (en) * 1970-06-24 1972-03-21 Advanced Technology Center Inc Light-sensitive gunn-effect device
US4264875A (en) 1978-01-26 1981-04-28 Hughes Aircraft Company System for optical injection phase locking and switching of microwave oscillators
IL56350A (en) * 1978-01-26 1981-03-31 Hughes Aircraft Co Optically synchronized microwave oscillator system
US4625182A (en) * 1985-10-28 1986-11-25 The United States Of America As Represented By The Secretary Of The Army Optically triggered bulk device Gunn oscillator
DE102018121672A1 (de) 2018-09-05 2020-03-05 Technische Universität Darmstadt Gunndiode und Verfahren zum Erzeugen einer Terahertzstrahlung
CN112531109B (zh) * 2020-11-18 2022-11-04 华南师范大学 一种基于静态畴的光控开关
JP7726752B2 (ja) * 2021-11-16 2025-08-20 大船企業日本株式会社 プリント基板における炭酸ガスレーザによるホール加工方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL291956A (esLanguage) * 1962-06-11
GB1050160A (esLanguage) * 1962-08-29
GB1070261A (en) * 1963-06-10 1967-06-01 Ibm A semiconductor device
US3200342A (en) * 1963-08-30 1965-08-10 Bell Telephone Labor Inc Optical frequency parametric amplifier and oscillator
US3267294A (en) * 1963-11-26 1966-08-16 Ibm Solid state light emissive diodes having negative resistance characteristics

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2719417A1 (fr) * 1994-04-28 1995-11-03 Le Person Henri Composant à hétérostructure semi-conductrice, commande par la lumière pour la génération d'oscillations hyperfréquences.
EP0684653A1 (fr) * 1994-04-28 1995-11-29 France Telecom Composant à hétérostructure semi-conductrice, commandé par la lumière pour la génération d'oscillations hyperfréquences
US5703379A (en) * 1994-04-28 1997-12-30 France Telecom Light-controlled semiconductor heterostructure component for generating oscillation at microwave frequencies

Also Published As

Publication number Publication date
JPS462706B1 (esLanguage) 1971-01-22
BE697573A (esLanguage) 1967-10-02
NL6704959A (esLanguage) 1967-10-30
US3440425A (en) 1969-04-22
GB1188986A (en) 1970-04-22

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