FR1512208A - Diode en semiconducteur haute tension et procédé pour la former - Google Patents
Diode en semiconducteur haute tension et procédé pour la formerInfo
- Publication number
- FR1512208A FR1512208A FR96155A FR96155A FR1512208A FR 1512208 A FR1512208 A FR 1512208A FR 96155 A FR96155 A FR 96155A FR 96155 A FR96155 A FR 96155A FR 1512208 A FR1512208 A FR 1512208A
- Authority
- FR
- France
- Prior art keywords
- forming
- high voltage
- semiconductor diode
- voltage semiconductor
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
- H10F30/292—Bulk-effect radiation detectors, e.g. Ge-Li compensated PIN gamma-ray detectors
- H10F30/2925—Li-compensated PIN gamma-ray detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US534974A US3413529A (en) | 1966-03-08 | 1966-03-08 | A semiconductor detector having a lithium compensated shelf region between opposite conductivity type regions |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1512208A true FR1512208A (fr) | 1968-02-02 |
Family
ID=24132300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR96155A Expired FR1512208A (fr) | 1966-03-08 | 1967-02-23 | Diode en semiconducteur haute tension et procédé pour la former |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3413529A (en, 2012) |
| BE (1) | BE694394A (en, 2012) |
| FR (1) | FR1512208A (en, 2012) |
| GB (1) | GB1108870A (en, 2012) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3501678A (en) * | 1967-06-28 | 1970-03-17 | Ortec | Tapered-shelf semiconductor |
| FR2094616A5 (en, 2012) * | 1970-06-26 | 1972-02-04 | Commissariat Energie Atomique | |
| DE10128654B4 (de) * | 2001-06-15 | 2008-04-10 | Forschungszentrum Jülich GmbH | Beidseitig mikrostrukturierter, ortsempfindlicher Detektor |
| DE10153241B4 (de) * | 2001-10-31 | 2008-04-03 | Forschungszentrum Jülich GmbH | Transmissionsdetektor nebst Herstellungsverfahren |
| US20090218503A1 (en) * | 2006-05-31 | 2009-09-03 | Shimadzu Corporation | Semiconductor X-Ray Detector Device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3116183A (en) * | 1958-05-15 | 1963-12-31 | Gen Electric | Asymmetrically conductive device |
| US3114864A (en) * | 1960-02-08 | 1963-12-17 | Fairchild Camera Instr Co | Semiconductor with multi-regions of one conductivity-type and a common region of opposite conductivity-type forming district tunneldiode junctions |
-
1966
- 1966-03-08 US US534974A patent/US3413529A/en not_active Expired - Lifetime
-
1967
- 1967-01-13 GB GB2050/67A patent/GB1108870A/en not_active Expired
- 1967-02-21 BE BE694394D patent/BE694394A/xx unknown
- 1967-02-23 FR FR96155A patent/FR1512208A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| BE694394A (en, 2012) | 1967-07-31 |
| GB1108870A (en) | 1968-04-03 |
| US3413529A (en) | 1968-11-26 |
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