FR1508064A - Improvements to processes for imparting semiconductor properties to certain substances - Google Patents

Improvements to processes for imparting semiconductor properties to certain substances

Info

Publication number
FR1508064A
FR1508064A FR16432A FR16432A FR1508064A FR 1508064 A FR1508064 A FR 1508064A FR 16432 A FR16432 A FR 16432A FR 16432 A FR16432 A FR 16432A FR 1508064 A FR1508064 A FR 1508064A
Authority
FR
France
Prior art keywords
processes
certain substances
semiconductor properties
imparting
imparting semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR16432A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Application granted granted Critical
Publication of FR1508064A publication Critical patent/FR1508064A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C01B32/28—After-treatment, e.g. purification, irradiation, separation or recovery
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
FR16432A 1964-05-28 1965-05-10 Improvements to processes for imparting semiconductor properties to certain substances Expired FR1508064A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US370798A US3317354A (en) 1964-05-28 1964-05-28 Process for doping a diamond in a gaseous electrical discharge

Publications (1)

Publication Number Publication Date
FR1508064A true FR1508064A (en) 1968-01-05

Family

ID=23461234

Family Applications (1)

Application Number Title Priority Date Filing Date
FR16432A Expired FR1508064A (en) 1964-05-28 1965-05-10 Improvements to processes for imparting semiconductor properties to certain substances

Country Status (4)

Country Link
US (1) US3317354A (en)
DE (1) DE1544190C3 (en)
FR (1) FR1508064A (en)
GB (1) GB1101563A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2359071A1 (en) * 1976-07-21 1978-02-17 Gen Electric DIAMOND annealing process
FR2393605A1 (en) * 1977-06-09 1979-01-05 Nat Res Dev Growing diamond crystals by ion bombardment - of heated seed crystal in vacuo, opt. with dopants

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3383567A (en) * 1965-09-15 1968-05-14 Ion Physics Corp Solid state translating device comprising irradiation implanted conductivity ions
US3483443A (en) * 1967-09-28 1969-12-09 Hughes Aircraft Co Diode having large capacitance change related to minimal applied voltage
GB1588445A (en) * 1977-05-26 1981-04-23 Nat Res Dev Toughening diamond
US4343628A (en) * 1981-01-27 1982-08-10 The United States Of America As Represented By The United States Department Of Energy Fluorinated diamond bonded in fluorocarbon resin
CA1235087A (en) * 1983-11-28 1988-04-12 Akio Hiraki Diamond-like thin film and method for making the same
US4844785A (en) * 1984-03-27 1989-07-04 Matsushita Electric Industrial Co., Ltd. Method for deposition of hard carbon film
IL79107A (en) * 1985-06-17 1989-03-31 De Beers Ind Diamond Ion implantation in crystalline substrate
DE3625743A1 (en) * 1986-07-30 1988-02-11 Winter & Sohn Ernst METHOD FOR MACHINING DIAMOND GRAINS
US5182093A (en) * 1990-01-08 1993-01-26 Celestech, Inc. Diamond deposition cell
US5201986A (en) * 1990-08-07 1993-04-13 Sumitomo Electric Industries, Ltd. Diamond synthesizing method
US7494638B1 (en) 1990-08-30 2009-02-24 Mitsubishi Corporation Form of carbon
US5145712A (en) * 1991-02-08 1992-09-08 Center For Innovative Technology Chemical deposition of diamond
US5227038A (en) * 1991-10-04 1993-07-13 William Marsh Rice University Electric arc process for making fullerenes
JPH05102068A (en) * 1991-10-11 1993-04-23 Kobe Steel Ltd Forming method for electrode of electronic device using diamond
US5674572A (en) * 1993-05-21 1997-10-07 Trustees Of Boston University Enhanced adherence of diamond coatings employing pretreatment process

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2787564A (en) * 1954-10-28 1957-04-02 Bell Telephone Labor Inc Forming semiconductive devices by ionic bombardment
US3207582A (en) * 1960-03-12 1965-09-21 Inoue Kiyoshi Method of synthesizing diamond particles by utilizing electric discharge
US3233137A (en) * 1961-08-28 1966-02-01 Litton Systems Inc Method and apparatus for cleansing by ionic bombardment
US3256696A (en) * 1962-01-29 1966-06-21 Monsanto Co Thermoelectric unit and process of using to interconvert heat and electrical energy

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2359071A1 (en) * 1976-07-21 1978-02-17 Gen Electric DIAMOND annealing process
FR2393605A1 (en) * 1977-06-09 1979-01-05 Nat Res Dev Growing diamond crystals by ion bombardment - of heated seed crystal in vacuo, opt. with dopants

Also Published As

Publication number Publication date
DE1544190A1 (en) 1972-02-24
US3317354A (en) 1967-05-02
DE1544190C3 (en) 1974-08-15
GB1101563A (en) 1968-01-31
DE1544190B2 (en) 1974-01-17

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