FR1506044A - Circuit de commutation à thyristor - Google Patents

Circuit de commutation à thyristor

Info

Publication number
FR1506044A
FR1506044A FR88703A FR88703A FR1506044A FR 1506044 A FR1506044 A FR 1506044A FR 88703 A FR88703 A FR 88703A FR 88703 A FR88703 A FR 88703A FR 1506044 A FR1506044 A FR 1506044A
Authority
FR
France
Prior art keywords
switching circuit
thyristor switching
thyristor
circuit
switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR88703A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of FR1506044A publication Critical patent/FR1506044A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Thyristors (AREA)
FR88703A 1966-03-25 1966-12-23 Circuit de commutation à thyristor Expired FR1506044A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US537544A US3404293A (en) 1966-03-25 1966-03-25 Thyristor switch utilizing series diodes to improve dynamic breakdown capability and reduce time to restore for ward blocking

Publications (1)

Publication Number Publication Date
FR1506044A true FR1506044A (fr) 1967-12-15

Family

ID=24143077

Family Applications (1)

Application Number Title Priority Date Filing Date
FR88703A Expired FR1506044A (fr) 1966-03-25 1966-12-23 Circuit de commutation à thyristor

Country Status (7)

Country Link
US (1) US3404293A (fr)
JP (1) JPS4412331B1 (fr)
BE (1) BE691717A (fr)
FR (1) FR1506044A (fr)
GB (1) GB1181076A (fr)
NL (1) NL6618118A (fr)
SE (1) SE307162B (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3444398A (en) * 1966-05-10 1969-05-13 Bell Telephone Labor Inc Thyristor switch utilizing diodes to improve recovery time
US3513328A (en) * 1968-05-06 1970-05-19 Gen Electric Pulse generating circuit utilizing avalanche firing of series connected scr's
US3585403A (en) * 1968-09-24 1971-06-15 Bell Telephone Labor Inc Auxiliary turnoff circuit for a thyristor switch
US3646366A (en) * 1970-11-23 1972-02-29 Gen Motors Corp Circuit for periodically reversing the polarity of a direct current potential supply line
US4107551A (en) * 1973-04-17 1978-08-15 Mitsubishi Denki Kabushiki Kaisha Thyristor turn-off system
JPS5629458B2 (fr) * 1973-07-02 1981-07-08
US3938027A (en) * 1974-06-12 1976-02-10 Mitsubishi Denki Kabushiki Kaisha Electrical thyristor circuit
US3943430A (en) * 1974-06-20 1976-03-09 Mitsubishi Denki Kabushi Kaisha Circuitry for reducing thyristor turn-off times
US4080538A (en) * 1974-12-20 1978-03-21 Mitsubishi Denki Kabushiki Kaisha Method of controlling switching of PNPN semiconductor switching device
US11190177B2 (en) * 2019-02-21 2021-11-30 Shenzhen GOODIX Technology Co., Ltd. Diode with low threshold voltage and high breakdown voltage

Also Published As

Publication number Publication date
BE691717A (fr) 1967-05-29
SE307162B (fr) 1968-12-23
NL6618118A (fr) 1967-09-26
US3404293A (en) 1968-10-01
GB1181076A (en) 1970-02-11
JPS4412331B1 (fr) 1969-06-04

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