FR1487060A - - Google Patents
Info
- Publication number
- FR1487060A FR1487060A FR1487060DA FR1487060A FR 1487060 A FR1487060 A FR 1487060A FR 1487060D A FR1487060D A FR 1487060DA FR 1487060 A FR1487060 A FR 1487060A
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P50/283—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US47616565A | 1965-07-30 | 1965-07-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1487060A true FR1487060A (cg-RX-API-DMAC10.html) | 1967-10-11 |
Family
ID=23890758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR1487060D Expired FR1487060A (cg-RX-API-DMAC10.html) | 1965-07-30 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US3434896A (cg-RX-API-DMAC10.html) |
| FR (1) | FR1487060A (cg-RX-API-DMAC10.html) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3979241A (en) * | 1968-12-28 | 1976-09-07 | Fujitsu Ltd. | Method of etching films of silicon nitride and silicon dioxide |
| US3767483A (en) * | 1970-05-11 | 1973-10-23 | Hitachi Ltd | Method of making semiconductor devices |
| US4171242A (en) * | 1976-12-17 | 1979-10-16 | International Business Machines Corporation | Neutral pH silicon etchant for etching silicon in the presence of phosphosilicate glass |
| US4859280A (en) * | 1986-12-01 | 1989-08-22 | Harris Corporation | Method of etching silicon by enhancing silicon etching capability of alkali hydroxide through the addition of positive valence impurity ions |
| EP0459631B1 (en) * | 1990-04-27 | 1998-08-12 | Seiko Epson Corporation | AT-cut crystal oscillating element and method of making the same |
| JP4590700B2 (ja) * | 2000-07-14 | 2010-12-01 | ソニー株式会社 | 基板洗浄方法及び基板洗浄装置 |
| US7166539B2 (en) * | 2003-07-22 | 2007-01-23 | Micron Technology, Inc. | Wet etching method of removing silicon from a substrate |
| US7045404B2 (en) * | 2004-01-16 | 2006-05-16 | Cree, Inc. | Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE570082A (cg-RX-API-DMAC10.html) * | 1957-08-07 | 1900-01-01 | ||
| US3133840A (en) * | 1962-03-08 | 1964-05-19 | Bell Telephone Labor Inc | Stabilization of junction devices with phosphorous tribromide |
-
0
- FR FR1487060D patent/FR1487060A/fr not_active Expired
-
1965
- 1965-07-30 US US476165A patent/US3434896A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US3434896A (en) | 1969-03-25 |